Bearing device and semiconductor equipment

Abstract

The invention provides a bearing device and semiconductor equipment. The bearing device comprises a base, a tray, a snap ring and an insulating connecting part. The tray is located on the base; the clamping ring is arranged around the tray in a surrounding mode; a first preset distance exists between the inner circumferential wall of the clamping ring and the outer circumferential wall of the trayin the horizontal direction, and the first preset distance meets the requirement that the clamping ring and the tray can be mutually insulated in the radial direction; the insulating connecting partis arranged between the tray and the clamping ring and used for enabling the clamping ring and the tray to be mutually insulated. According to the bearing device and the semiconductor equipment, whichare provided by the invention, the sparking phenomenon can be avoided; and the pressing ring can be prevented from being in contact with the process surface of a to-be-processed workpiece, so that the process result of the to-be-processed workpiece is improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductor equipment, and in particular, to a carrying device and semiconductor equipment. Background technique [0002] At present, in semiconductor processing equipment, mechanical chucks are generally used to carry highly warped substrates, bonded substrates, and insulating substrates, and can be applied to the normal temperature sputtering process of semiconductor processing to carry wafers. [0003] In the existing semiconductor processing equipment, the process chamber is usually provided with a base assembly device, a pressure ring and a mechanical chuck, wherein the mechanical chuck includes a tray arranged on the base assembly device for carrying a wafer, and a surrounding set Snap ring around tray. During the sputtering deposition process, the upper surfaces of the wafer, snap ring, and pressure ring are exposed to the plasma environment and are bombarded by charged particles. Among ...

AI Technical Summary

Problems solved by technology

[0005] However, since the edge region of the upper surface of the wafer is pressed by the pressure ring, the edge region cannot be deposited during sputtering deposition, thereby affecting subsequent processes (such as electroplating)

Moreover, during the continuous process, the heat accumulated on the pressure ring will be transferred to the wafer, causing the edge temperature of the wafer to be too high and affecting the process performance

In addition, in some equipment such as Physical Vapor Deposition (Physical Vapor Deposition, PVD), when the RF bias is applied to the pedestal assembly device, most of the RF energy is introduced to the edge of the wafer through the pressure ring, and only a little The RF energy is loaded to the middle part of the wafer through the tray, which makes the RF energy density loaded on the wafer gradually decrease from the edge to the center of the wafer, resulting in a greater impact on the uniformity of film deposition

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