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nis 2 Enhanced graphene-based SERS device and preparation method thereof

A graphene-based and graphene-based technology, applied in the field of NiS2-enhanced graphene-based SERS devices, can solve problems such as insufficient detection accuracy and strong dependence on excitation light sources, so as to broaden the application range, increase detection sensitivity, and enhance Raman signal intensity Effect

Active Publication Date: 2021-12-24
王玲娟
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, only relying on the surface plasmon resonance properties of noble metal nanoparticles itself has a strong dependence on the excitation light source, and the detection accuracy is not enough, so there are serious application limitations.

Method used

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  • nis <sub>2</sub> Enhanced graphene-based SERS device and preparation method thereof

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Embodiment 1

[0030] A kind of NiS 2 Enhanced graphene-based SERS device, the specific structure of which is M-NiS 2 / NiS-graphene, where M is a noble metal nanolayer, NiS 2 / NiS for alternate NiS 2 And NiS nano-multilayer structure.

[0031] Wherein, the thickness of the noble metal nano layer is 20nm, and the noble metal is Au. The number of layers of the nano-multilayer structure is 10 layers, and each layer of NiS 2 The thickness of NiS is 3nm, and the thickness of each layer of NiS is 3nm.

[0032] The NiS 2 A method for preparing an enhanced graphene-based SERS device, comprising the following steps:

[0033] (1) Using polystyrene colloidal sphere template as substrate, chemical vapor deposition of graphene layer on its surface;

[0034] (2) Atomic layer deposition of alternating NiS on the surface of the graphene layer 2 and NiS nano-multilayer structure;

[0035] (3) In alternating NiS 2 Magnetron sputtering of noble metal nanolayers on the surface of NiS nanometer multila...

Embodiment 2

[0045] A kind of NiS 2 Enhanced graphene-based SERS device, the specific structure of which is M-NiS 2 / NiS-graphene, where M is a noble metal nanolayer, NiS 2 / NiS for alternate NiS 2 And NiS nano-multilayer structure.

[0046] Wherein, the thickness of the noble metal nano layer is 5-50nm, and the noble metal is Ag. The number of layers of the nano-multilayer structure is 20 layers, and each layer of NiS 2 The thickness of NiS is 1 nm, and the thickness of each layer of NiS is 1 nm.

[0047] The NiS 2 A method for preparing an enhanced graphene-based SERS device, comprising the following steps:

[0048] (1) Using polystyrene colloidal sphere template as substrate, chemical vapor deposition of graphene layer on its surface;

[0049] (2) Atomic layer deposition of alternating NiS on the surface of the graphene layer 2 and NiS nano-multilayer structure;

[0050](3) In alternating NiS 2 Magnetron sputtering of noble metal nanolayers on the surface of NiS nanometer mult...

Embodiment 3

[0060] A kind of NiS 2 Enhanced graphene-based SERS device, the specific structure of which is M-NiS 2 / NiS-graphene, where M is a noble metal nanolayer, NiS 2 / NiS for alternate NiS 2 And NiS nano-multilayer structure.

[0061] Wherein, the thickness of the noble metal nano layer is 5-50nm, and the noble metal is Cu. The number of layers of the nano-multilayer structure is 5 layers, each layer of NiS 2 The thickness of NiS is 5 nm, and the thickness of each layer of NiS is 5 nm.

[0062] The NiS 2 A method for preparing an enhanced graphene-based SERS device, comprising the following steps:

[0063] (1) Using polystyrene colloidal sphere template as substrate, chemical vapor deposition of graphene layer on its surface;

[0064] (2) Atomic layer deposition of alternating NiS on the surface of the graphene layer 2 and NiS nano-multilayer structure;

[0065] (3) In alternating NiS 2 Magnetron sputtering of noble metal nanolayers on the surface of NiS nanometer multilay...

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Abstract

The present invention relates to a kind of NiS 2 Enhanced graphene-based SERS device, the specific structure of which is M‑NiS 2 / NiS‑graphene, where M is a noble metal nanolayer, NiS 2 / NiS for alternate NiS 2 And NiS nano-multilayer structure. Using the polystyrene colloidal sphere template as the substrate, chemical vapor deposition of graphene layers on the surface; (2) atomic layer deposition of alternating NiS on the surface of the graphene layer 2 and NiS nanolayer structure; (3) in alternating NiS 2 Magnetron sputtering of noble metal nanolayers on the surface of NiS nanometer multilayer structure. NeS 2 The introduction of can significantly increase the detection sensitivity of the device to different probe molecules. Alternate NiS 2 Combining with the NiS nano-multilayer structure on the graphene layer and the noble metal layer, the substrate can achieve Raman enhancement at various excitation wavelengths, which broadens the application range of its Raman analysis.

Description

technical field [0001] The invention relates to the field of surface-enhanced Raman scattering spectroscopy (SERS) devices, in particular to a NiS 2 Enhanced graphene-based SERS devices. Background technique [0002] Raman scattering means that after light interacts with molecules or atoms and is scattered, the frequency also changes. The surface-enhanced spectroscopy technique based on Raman scattering, that is, the surface-enhanced Raman scattering spectroscopy (SERS) technique, can detect the change information of the polarizability generated by the vibration of chemical bonds in molecules. [0003] The intensity of the surface-enhanced Raman scattering spectrum is much higher than that of the ordinary Raman scattering spectrum, and its intensity enhancement mechanism includes electromagnetic enhancement and chemical enhancement. Among them, electromagnetic enhancement is caused by localized surface plasmon resonance and electromagnetic excitation confined within the na...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C28/00C23C16/26C23C16/30C23C16/455C23C14/18C23C14/35G01N21/65
CPCC23C28/322C23C28/34C23C16/26C23C16/305C23C16/45529C23C14/185C23C14/35G01N21/658
Inventor 隋学森
Owner 王玲娟
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