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Optical alignment device and photoetching system

An optical alignment and alignment mark technology, applied in the field of lithography, can solve the problems of easy occurrence of optical crosstalk, reduced scanning signal energy, affecting alignment accuracy, etc., to improve overlay accuracy and lithography effect, eliminate interference, The effect of improving the alignment effect

Active Publication Date: 2020-08-07
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When this narrow mark is used in a silicon wafer alignment system, optical crosstalk easily occurs between the narrow mark and other alignment marks or non-alignment marks, and between the narrow mark and photolithography lines, etc., resulting in The energy of the scanning signal corresponding to the narrow mark is reduced, which affects the alignment accuracy

Method used

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  • Optical alignment device and photoetching system
  • Optical alignment device and photoetching system
  • Optical alignment device and photoetching system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Please refer to figure 2 , an embodiment of the present invention provides an optical alignment device, including a light source illumination unit 1, an alignment mark unit 2, an imaging unit 3, a reference mark unit 4, and a signal detection and processing unit (not shown) arranged in sequence along the optical path . Wherein, the alignment mark unit 2 includes at least one narrow mark 20 for optical alignment, and the reference mark unit 4 includes at least one reference grating corresponding to the narrow mark 20 (such as figure 2 41a, 41b), the light source lighting unit 1 is used to emit an illumination beam and transmit it to the narrow mark 20, and the imaging unit 3 is used to image the narrow mark 20 on each of the reference gratings.

[0047] In this embodiment, the alignment mark unit 2 only includes a narrow mark 20 (ie figure 1 101 in), the width of the narrow mark 20 (i.e. figure 1 The width W) of 101 in is generally much smaller than the illumination...

Embodiment 2

[0072] Please refer to Figure 12 , another embodiment of the present invention provides an optical alignment device, and Figure 2 to Figure 11B Compared with the optical alignment device in the first embodiment shown, each light-passing area (i.e., the light-passing hole 320) of the beam-limiting element used to pass through the narrow mark 20 for the diffracted light beam above ±1 order is replaced by a rectangle to Long ellipse, wherein L1 of each light-transmitting area (ie, the light-through hole 320 ) is the length of the long axis of the long ellipse, and L2 is the length of the short axis of the long ellipse. The long elliptical light-transmitting area can also achieve the same technical effect as the rectangular light-transmitting area in Embodiment 1.

[0073] In addition, since other structures of the optical alignment device of this embodiment can be compatible with Figure 2 to Figure 11B The corresponding structures in the optical alignment device in the first...

Embodiment 3

[0077] Please refer to Figure 13 and Figure 14 , another embodiment of the present invention provides an optical alignment device, and Figure 2 to Figure 11BCompared with the optical alignment device in the shown embodiment 1, the alignment mark unit 2 includes more than four diffraction grating-type narrow marks, and these narrow marks are arranged in a two-dimensional manner along the X direction and the Y direction of FIG. 9 . Cross structure, at this time, in order to be able to pass through the ±1 order or more diffracted beams of these narrow marks and receive the image formed by these narrow marks, the beam confinement element is used to pass the ±1 order or more diffracted beams of these narrow marks The arrangement of the light-passing area and the arrangement of the reference grating in the reference mark unit 4 need to match the arrangement structure of all the narrow marks in the alignment mark unit 2, specifically, each light-passing area of ​​the beam limitin...

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Abstract

The invention provides an optical alignment device and a photoetching system, wherein the device and the system can be compatible with alignment scanning of narrow marks, effectively improve the scanning signal energy of the marks, inhibit optical crosstalk between the marks and between the marks and photoetching lines, and improve the alignment precision. According to the invention, further a light beam modulation element in an imaging unit comprises a plurality of sub-components which are arranged at the positions of light transmission areas, except + / -1-level diffraction light beams passingthrough a diffraction grating, of a light beam limiting element in a one-to-one correspondence mode, interference of zero-order light and stray light can be eliminated, the scanning signal energy ofthe mark is further improved, and the alignment precision is improved.

Description

technical field [0001] The invention relates to the technical field of photolithography, in particular to an optical alignment device and a photolithography system. Background technique [0002] In the manufacturing process of semiconductor integrated circuits (ICs), chips usually need to undergo multiple photolithographic exposures before they can be completed. Except for the first lithography, the lithography of the other levels must be aligned with the graphics left by the previous level of exposure before exposure (that is, precise positioning), so as to ensure that there is a gap between the graphics of each layer. The correct relative position is overlay. Alignment is to determine the relative positional relationship between them through special marks on the mask plate (used to carry the mask pattern), the silicon wafer, and the workpiece table (used to carry the silicon wafer), so that the mask pattern can be accurately imaged on the On silicon wafers, overlay preci...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F9/00G03F7/20
CPCG03F7/70775G03F7/7085G03F9/7069G03F7/20G03F9/00
Inventor 孙建超
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD