Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A semiconductor crystal growth device

A crystal growth and semiconductor technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., to achieve the effect of being conducive to stable growth, reducing the difference, and improving the axial temperature gradient

Active Publication Date: 2021-12-17
ZING SEMICON CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the heat shield device is fixed, the shape and position of the guide tube are fixed. When the diameter of the silicon crystal rod is constant, it is difficult to further reduce the Drc to achieve a large axial temperature gradient of the silicon crystal. Realization of the control of the screen device itself

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A semiconductor crystal growth device
  • A semiconductor crystal growth device
  • A semiconductor crystal growth device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0031] For a thorough understanding of the present invention, a detailed description will be set forth in the following description to illustrate the semiconductor crystal growth apparatus of the present invention. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detailed descriptions.

[0032] It should be noted that the terms used h...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention provides a semiconductor crystal growth device, which comprises: a furnace body; a crucible arranged inside the furnace body to accommodate silicon melt; a pulling device arranged in the The top of the furnace body is used to pull out silicon crystal rods from the silicon melt; and a heat shield device, the heat shield device includes a draft tube, and the draft tube is barrel-shaped and wraps around the silicon crystal Rods are arranged around to rectify the argon gas input from the top of the furnace body and adjust the thermal field distribution between the silicon crystal rods and the silicon melt level; wherein, the heat shield device also includes The adjustment device arranged inside the lower end of the draft tube is used to adjust the minimum distance between the heat shield device and the silicon crystal rod. According to the present invention, by setting the adjustment device inside the lower end of the draft tube, the distance between the silicon crystal rod and the device close to the heat shield can be adjusted without changing the shape and position of the draft tube, thereby improving the crystal growth speed and quality.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor crystal growth device. Background technique [0002] The Czochralski method (Cz) is an important method for preparing silicon single crystals for semiconductors and solar energy. The high-purity silicon material placed in the crucible is heated to melt it through a thermal field composed of carbon materials, and then the seed crystal is immersed in the In the melt and through a series of processes (seeding, shouldering, equal diameter, finishing, cooling), a single crystal rod is finally obtained. [0003] In the crystal pulling process, a heat shield device, such as a draft tube (or reflective screen), is often provided around the produced silicon crystal rod. On the one hand, it is used to isolate the quartz crucible and the silicon melt in the crucible from the crystal during the crystal growth process. The heat radiation generated on the surface inc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/00C30B29/06
CPCC30B15/00C30B29/06C30B15/20C30B15/14Y02P70/50C30B15/007Y10T117/1068
Inventor 沈伟民王刚邓先亮
Owner ZING SEMICON CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com