Semi-floating gate memory based on pn junction and Schottky diode and preparation method thereof

Abstract

The invention belongs to the technical field of integrated circuit memories and particularly relates to a semi-floating gate memory based on a pn junction and a Schottky diode and a preparation methodof the semi-floating gate memory. The invention discloses the semi-floating gate memory, the pn junction and the Schottky diode are simultaneously embedded in a floating gate transistor and are respectively used as charge erasing and writing channels; the pn junction has a rectification characteristic, namely forward conduction and reverse cut-off, and the turn-on voltage is very small; the pn junction is used as a charge erasure channel, so that the erasure speed can be greatly increased; the Schottky diode also has a rectification characteristic, and the turn-on voltage is very small; and the Schottky diode is used as a charge writing channel, so that the charge writing speed can be greatly improved.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit memory, and in particular relates to a semi-floating gate memory based on a pn junction and a Schottky diode and a preparation method thereof. Background technique [0002] At present, the DRAM devices used in integrated circuit chips are mainly 1T1C structures, that is, a transistor is connected in series with a capacitor, and the capacitor is charged and discharged through the switching of the transistor, thereby realizing the conversion between 0 and 1 of the DRAM device. As the device size becomes smaller and smaller, DRAM devices used in integrated circuit chips are facing more and more problems. For example, DRAM devices require 64 ms to refresh once, so the capacitance value of the capacitor must be kept above a certain value to ensure sufficient Long charge retention time, but with the shrinking of the feature size of integrated circuits, the manufacture of large capacitors has ...

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Problems solved by technology

However, the tunneling transistor is a minority current device, which means that the driving current of the tunneling transistor is small, which will affect the erasing speed of the semi-floating gate transistor.

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