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Preparation and working characteristics of ZnPc/PbPc blending evaporation thin-film diode

A technology of evaporating thin films and diodes, which is applied in semiconductor/solid-state device manufacturing, organic semiconductor device manufacturing/processing, electrical components, etc., to achieve the effect of easy production and high-speed work production

Inactive Publication Date: 2017-08-11
HARBIN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the properties of organic photodiodes, such as carrier mobility, are less than those of inorganic phototransistors

Method used

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  • Preparation and working characteristics of ZnPc/PbPc blending evaporation thin-film diode
  • Preparation and working characteristics of ZnPc/PbPc blending evaporation thin-film diode
  • Preparation and working characteristics of ZnPc/PbPc blending evaporation thin-film diode

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Embodiment 1

[0023] The present invention adopts the coating mode of vacuum evaporation and magnetron sputtering, has prepared the organic film photodiode that has vertical structure to be ITO / ZnPc+PbPc / Al, and aluminum cathode forms Schottky contact with the organic film on one side, and aluminum film The thickness is 20nm. The production sequence is as follows: first, use magnetron sputtering to form an ITO electrode as the anode of the diode on a clean glass substrate, then use vacuum evaporation to form a blend film of zinc phthalocyanine and lead phthalocyanine, and finally use magnetron sputtering An aluminum electrode is formed as a cathode, and the thickness of the organic film in the finished product is 120-130nm.

Embodiment 2

[0025] In the organic photoelectric thin film diode described in the above case, the active layer is mixed with two phthalocyanine materials, ZnPc and PbPc. By controlling the mixing ratio of the two materials, different output characteristics can be obtained to meet different needs. The barrier height of the device with the mixed mass ratio of ZnPc:PbPc of 1:1 is 0.355eV, and the influence factor n is 18.21. The barrier heights of devices with ZnPc:PbPc mixing mass ratios of 4:5 and 5:4 are 0.417eV and 0.378eV, respectively. With different mixing methods of organic materials, the Schottky barrier inside the device will also be different. The output current of the device increases with the increase of the input voltage, and the device has rectification characteristics. The maximum current of the diode formed by blending and evaporating the two materials in the active layer can reach tens of μA, which is higher than that of the diode formed by evaporating a single material.

Embodiment 3

[0027] The organic photoelectric thin film diode described in the above case has a wider light-sensing wavelength band. Under the illumination of 341nm, the fill factor of the diode is FF=0.324, and the photoelectric energy conversion efficiency η=0.137%. When forward biased, the optical amplification factor of the current is in the range of 1.3-5.

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Abstract

Disclosed are preparation and working characteristics of a ZnPc / PbPc blending evaporation thin-film diode. In recent years, organic thin-film transistors evaporated from single organic materials are widely manufactured and researched. The organic thin-film diode is manufactured by blending evaporation of two organic materials, and the two organic materials are respectively zinc phthalocyanine and lead phthalocyanine (ZnPc and PbPc). The ZnPc / PbPc blending evaporation thin-film diode comprises a substrate (1), an ITO (Indium Tin Oxide) thin-film electrode serving as an anode (2) of the diode, an evaporated blending thin film of ZnPc and PbPc serving as an active layer (3) and an Al thin-film electrode serving as a cathode (4), wherein ZnPc and PbPc have three different blending mass ratios, which are respectively 1: 1, 4: 5 and 5: 4. The diode has higher current density and wider photosensitive wavelength zone, and can be applied in wide fields of photosensor units, photoelectric sensor array devices and the like.

Description

technical field [0001] The invention relates to an organic photoelectric thin film diode which adopts two kinds of organic materials for blending vapor deposition as the device active layer. Background technique [0002] Since the organic photodiode OLED was discovered in the middle of the 20th century, its technology has been continuously innovated and improved, and it is considered to be the main force in the field of third-generation display technology. OLED technology has many advantages such as low power consumption, active light emission, all solid state, high luminous brightness, rich colors and easy realization of flexible display. [0003] However, characteristics of organic photodiodes, such as mobility of carriers, are smaller than those of inorganic phototransistors. At present, using the combination of OLED and SIT structures, a new structure OLET has been prepared, which has the advantages of high-speed operation and easy fabrication. Contents of the inventi...

Claims

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Application Information

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IPC IPC(8): H01L51/56H01L51/50H01L51/54
CPCH10K85/311H10K50/14H10K50/00H10K71/00H10K2102/301
Inventor 王东兴赵双杨美中
Owner HARBIN UNIV OF SCI & TECH
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