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Thermopile and manufacturing method thereof

A manufacturing method and thermopile technology, which is applied in the field of infrared detectors, can solve problems such as device damage, and achieve the effect of high selection ratio and steep etching morphology

Active Publication Date: 2020-08-14
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the selection ratio of the dry process is lower than that of the wet process. Due to the uniformity of the process, after the bulk silicon is etched, it will continue to over-etch to the bottom oxide stop layer. Once the stop layer is pierced, the entire device will be damaged. up

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  • Thermopile and manufacturing method thereof
  • Thermopile and manufacturing method thereof
  • Thermopile and manufacturing method thereof

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Embodiment Construction

[0032] The present invention proposes a dry etching release technology that is simple in process, compatible with CMOS (complementary metal oxide semiconductor, complementary metal oxide semiconductor) process and has a very high selectivity ratio. The invention adopts a conventional substrate, etches and releases the substrate step by step through a dry etching release process, and manufactures a thermopile device while maintaining the integrity of the thermopile structure.

[0033] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0034] As an aspect of the present invention, such as figure 1 and Figure 3 to Figure 10 As shown, a method for manufacturing a thermopile is provided, comprising the steps of:

[0035] Step 1: forming a thermopile structure on the front surface ...

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Abstract

The invention discloses a thermopile and a manufacturing method thereof. The manufacturing method comprises the following steps: forming a thermopile structure on the front surface of a substrate; forming a mask layer on the back surface of the substrate; forming a positioning etching window on the mask layer by adopting dry etching; carrying out first-step etching release on the substrate in thepositioning etching window area by adopting Bosch etching; and carrying out second-step etching release on the substrate by adopting reactive ion etching to obtain a completely-released back cavity and a thermopile structure which keeps complete, thereby finishing the preparation of the thermopile. A conventional substrate is adopted, the substrate is etched and released step by step through a dryetching and releasing process, and a thermopile device is manufactured while the structural integrity of the thermopile is kept.

Description

technical field [0001] The invention relates to the technical field of infrared detectors, in particular to a thermopile and a manufacturing method thereof. Background technique [0002] At present, infrared detectors are widely used in civilian and military fields, and thermopile infrared detectors are the earliest developed among many types of infrared detectors. Due to its advantages of being able to work at room temperature, wide response band, and low production cost, it develops extremely rapidly and is widely used. In the process preparation of thermopile infrared detectors, the compatibility of its manufacturing process with the integrated circuit process is the main way to form a large-scale detection array, improve the detection responsivity, and reduce the process manufacturing cost. [0003] In a process compatible with integrated circuits, the large-area silicon release of the back cavity is a crucial part. This technology completely releases the substrate sili...

Claims

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Application Information

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IPC IPC(8): H01L35/34H01L35/32H01L35/02
CPCH10N10/80H10N10/01H10N10/17Y02P70/50
Inventor 周娜李俊杰毛海央高建峰杨涛李俊峰王文武
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI