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Method for improving process window of rear-section metal wire through hole

A process window, metal wire technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as defects, excess redundancy, and SAV size increase

Active Publication Date: 2020-08-21
NANJING CHENGXIN INTEGRATED CIRCUIT TECH RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method will cause the size of SAV to increase in the critical and non-critical directions at the same time, causing the EPE in the critical direction to be too large to exceed the redundancy, causing unnecessary defects to affect the yield

Method used

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  • Method for improving process window of rear-section metal wire through hole
  • Method for improving process window of rear-section metal wire through hole
  • Method for improving process window of rear-section metal wire through hole

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Embodiment Construction

[0036] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0037] see figure 1 , the present invention provides a method for improving the process window of back-stage metal line through holes, including:

[0038] S101. Fabricate metal line grooves on the substrate and perform deposition photolithography.

[0039] Specifically, after using a standard self-aligned double patterning structure (SADP, Self-aligned Double Patterning) or damascene structure (SALELE) to perform photolithography on the third hard mask according to the set pattern, the The third hard mask and the substrate (Low...

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Abstract

The invention discloses a method for improving a process window of a rear-section metal wire through hole. The method comprises the following steps of: manufacturing a metal wire groove on a substrateby using a self-alignment dual imaging structure or a Damascus structure, performing deposition photoetching, exposing a self-alignment through hole by using a photoetching process, and etching a first hard mask; injecting boron ions into the side wall of the first hard mask in the key direction at a set inclination angle, and over-etching a second hard mask through the two obtained etching selections to increase the size of the second hard mask in the non-key direction; etching a planarization layer according to a pattern obtained by over-etching the second hard mask, and opening the throughhole; and finally after the through hole is filled with a metal by using a Damascus process, mechanically polishing the through hole. According to the invention, the etching process window is improved, and the yield is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuits, in particular to a method for improving the process window of through-holes of back-stage metal lines. Background technique [0002] In the back-end-of-line (BEOL) metal interconnection process of advanced nodes, self-aligned vias (self-aligned vias, SAVs) are an important means of controlling process stability. Mask to eliminate the risk of pattern defects caused by EPE (edge ​​placement error) in this direction, ensure that the final via hole size meets the design requirements, and improve the process window. Under the limit size, the existing process is easy to cause insufficient etching. The generally used over-etching method is used as compensation, artificially increasing the amount of etching to enlarge the size of the through hole, so as to improve the etching process window. However, this method will cause the size of SAV to increase in the critical and non-cri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
CPCH01L21/76897H01L21/76898H01L21/76877
Inventor 陈睿都安彦韦亚一粟雅娟杨红董立松张利斌苏晓菁王文武
Owner NANJING CHENGXIN INTEGRATED CIRCUIT TECH RES INST CO LTD
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