Gluing method for thinning-type wafer

Abstract

The invention provides a gluing method for a thinning-type wafer. The gluing method comprises the following steps that S1, a preset vacuum degree is set, a to-be-glued wafer is sucked on a wafer holding table under the preset vacuum degree, the wafer holding table is controlled to rotate at a first rotation speed, and the center of the wafer is glue-applied through a glue nozzle; S2, after glue-applying is finished, the wafer holding table rotates at a second rotation speed to conduct glue-applying reflow, wherein the second rotation speed is less than the first rotation speed; S3, the wafer holding table rotates at a third rotation speed first, and then at a fourth rotation speed to perform glue spinning at variable speeds on the wafer, wherein third rotation speed is less than the fourthrotation speed; S4, the wafer holding table is controlled to conduct glue spinning at a fifth rotation speed, and the photoresist spinning is completed; S5, the wafer holding table is controlled to rotate at a sixth rotation speed to make photoresist form a film on the surface of the wafer, wherein the fifth rotation speed is less than the sixth rotation speed; and S6, the wafer holding table rotates at a seventh rotation speed, and the wafer is scanned from a first position to a second position through a cleaning nozzle for trimming treatment. The uniformity of the photoresist on the surfaceof the wafer can be improved, and the photoresist accumulation and liquid splashing are avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor photolithography, in particular to a glue coating method for thinned wafers. Background technique [0002] As the development of electronic products tends to be more and more multi-functional integrated and miniaturized, the requirements for portability are getting higher and higher. This requires the continuous development of circuit chips in the direction of high density, high performance, thinness and shortness, which requires continuous reduction in the thickness of the chip package. Taking memory as an example, its package form is mainly stacked package. With the continuous increase of storage capacity At present, the number of packaging layers has reached more than 96 layers. In order to meet the requirements of advanced IC packaging, the thickness of each layer of chips in the stack will inevitably need to be thinned under the trend that the overall thickness of the package remains un...

AI Technical Summary

Problems solved by technology

[0005] However, the above-mentioned method and the glue-spinning step in the existing wafer gluing process formula are generally traditional low-speed-high-speed simple structures, and this formula is very easy to make the wafer surface photoresist when coating a taiko ring with a special substrate. Coating is uneven, film thickness stability is difficult to control, and the junction of taiko ring and plane is easy to cause photoresist accumulation and liquid backsplash, which is difficult to remove later

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