Semiconductor structure and forming method thereof

Abstract

The invention provides a semiconductor structure and a forming method thereof. The forming method comprises the steps of providing a fin part and a channel lamination layer located on the fin part, wherein the channel lamination layer comprises a sacrificial layer and a channel layer located on the sacrificial layer, part of the channel layer close to one side of the fin part serves as a first channel layer, and the remaining channel layer located on the first channel layer serves as a second channel layer; forming a plurality of pseudo gate structures crossing the channel stack; forming a first source-drain doped layer in contact with the first channel layer in the channel lamination layers at the two sides of the pseudo gate structure; forming a second source-drain doping layer on the side wall of the second channel layer; and after the pseudo gate structure and the sacrificial layer are removed, forming a gate structure at the positions of the pseudo gate structure and the sacrificial layer. The first source-drain doped layer, the first channel layer and the gate structure surrounding the first channel layer are used for forming a transistor, and the second source-drain doped layer, the second channel layer and the gate structure surrounding the second channel layer form another transistor, so that the electrical performance of the semiconductor structure is optimized.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular, to a semiconductor structure and a method for forming the same. Background technique [0002] In semiconductor manufacturing, with the development trend of ultra-large-scale integrated circuits, the feature size of integrated circuits continues to decrease. In order to adapt to smaller feature sizes, metal-oxide-semiconductor field-effect transistors (Metal-Oxide-Semiconductor Field-Effect Transistor, The channel length of MOSFET) is also continuously shortened accordingly. However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the ability of the gate structure to control the channel becomes worse, and the gate voltage pinches off the channel. The channel becomes more and more difficult, making subthreshold leakage (subthreshold leakage), the so-called short-ch...

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Problems solved by technology

However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so the ability of the gate structure to control the channel becomes worse, and the gate voltage pinches off the channel. The difficulty of the channel is also increasing, making the phenomenon of subthreshold leakage (subthreshold leakage), the so-called short-channel effect (SCE: short-channel effects) more likely to occur

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