Mask, method for preparing semiconductor device and semiconductor device

Abstract

The invention provides a mask, a method for preparing a semiconductor device and the semiconductor device. The mask comprises a mask substrate, the mask substrate is provided with a plurality of firstareas used for forming a target graph and arranged at intervals in a first preset direction and a second area arranged around the first areas, one of the first areas and the second area is a shadingarea, and the other one of the first areas and the second area is a light transmitting area; wherein at least one target first area exists in the plurality of first areas, and at least one side of thetarget first area meets the condition that the rest of the first areas do not exist in a preset distance threshold value along the first preset direction. The embodiment of the invention provides a new mask structure, the windowing pattern of the non-uniform and non-tight area in the mask is subjected to shrinkage design, and in a baking process, the shape of the shrinkage pattern after being heated to expand outwards is the same as that of the original design, the preparation precision of the semiconductor device is improved, and the preparation cost is saved.

Description

technical field [0001] The disclosure belongs to the technical field of semiconductors, and in particular relates to a mask, a method for preparing a semiconductor device and a semiconductor device. Background technique [0002] In the existing semiconductor devices, such as the process of gold bumps, the photoresist layer coated on the wafer is generally exposed and developed through a designed mask to obtain an open photoresist layer. After that, metal material is filled into the opening to form a gold bump. [0003] Such as figure 1 As shown, it is a schematic diagram of a traditional mask structure. The mask 100 includes a plurality of light-shielding regions 101 and light-transmitting regions 102 arranged at intervals. figure 1 , the left side of the leftmost light-shielding area 101 is an open area (there are no other light-shielding areas 101). Like this, when utilizing the mask plate 100 of this structure to pattern the photoresist layer, combine together figure...

AI Technical Summary

Problems solved by technology

Obviously, when using the patterned photoresist layer 202 to prepare gold bumps, such as Figure 3 and Figure 4 As shown in , when gold bumps 204 are formed by electroplating into each opening window 201, and the rest of the photoresist layer 202 is etched to finally obtain the finished gold bumps 204, the leftmost gold bump There is an obvious deviation on the left side of the 204 size, which affects the preparation accuracy of the gold bumps. In addition, if the expected gold bumps are formed by filling metal materials in the later stage, the leftmost gold bumps need to use more than the design requirements. Filling with metal materials will increase material consumption and increase manufacturing costs

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