Memory and method of forming the same

Abstract

The present invention provides a memory and a method of forming the same. By making the width dimension of the first bit line located at the edge position in the bit line group larger than the width dimension of the second bit line arranged in the bit line group, when the bit line group is prepared, not only the morphology of the first bit line can be guaranteed, but also the shape of the first bit line can be guaranteed. In addition, under the blocking protection of the first bit line with a larger width, the topography accuracy of the second bit line can also be improved, which is beneficial to improve the device performance of the formed memory. Similarly, since the width dimension of the first contact portion located at the edge position among the plurality of node contact portions is larger than the width dimension of the second contact portion, the topography of the first contact portion can be guaranteed correspondingly, and the pattern of the second contact portion can be improved accordingly. accuracy, further improving the device performance of the formed memory.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a memory and a method for forming the same. Background technique [0002] A memory, such as a dynamic random access memory (DRAM), usually has a memory cell array, and the memory cell array includes a plurality of memory cells arranged in an array. And, the memory also has a plurality of bit lines, each of which is electrically connected to a corresponding storage unit, and the memory further includes a storage capacitor for storing charges representing stored information, and all The storage unit can be electrically connected to the storage capacitor through a node contact portion, so as to realize the storage function of each storage unit. [0003] At present, a method for forming a memory generally includes: forming a bit line group, and using the bit line group to define a node contact window, and then filling the node contact window with a conductive mat...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a memory to solve the problem that the bit line and node contact at the edge of the existing memory are prone to abnormal morphology, thereby affecting the performance of the memory

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