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Gas supply unit and gas supply method

一种气体供给单元、气体供给的技术，应用在电气元件、液体/流体固体测量、气态化学镀覆等方向，能够解决产生微粒、薄膜品质降低等问题，达到缩短冷却时间、缩短工艺时间的效果

Active Publication Date: 2020-09-15
CKD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These deposits can lead to reduced film quality, particle generation in the chamber

Method used

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  • Gas supply unit and gas supply method
  • Gas supply unit and gas supply method

Examples

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Embodiment Construction

[0029] Next, an embodiment of a gas supply unit and a gas supply method according to the present invention will be described with reference to the drawings. figure 1 It is an external perspective view of the gas supply unit 1 according to the embodiment of the present invention. figure 2 It is a plan view of the gas supply unit 1 . image 3 It is a side view of the gas supply unit 1 . Figure 4 for figure 1 A-A sectional view of . Figure 5 A diagram illustrating the flow of cooling air. In addition, in the following description, the thickness direction of the base plate 10 is demonstrated as an up-down direction.

[0030] figure 1 and figure 2 The gas supply unit 1 shown is in the direction of gas flow ( figure 2 The pressure sensor 16 and the valve 17 are integrally connected in series in a left-right direction in the center. The gas supply unit 1 is used, for example, in a CVD apparatus for forming a thin film on a wafer in a semiconductor manufacturing apparatus...

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Abstract

The invention relates to a gas supply unit which can reduce cooling time so that reduce the process time of a semiconductor manufacturing device. The gas supply unit (1) is configured such that when afirst gas whose temperature has been controlled at a first temperature is supplied to a chamber (5) through an upper device (13) and then a second gas which starts a chemical reaction at a reaction start temperature lower than the first temperature is supplied to the chamber (5) through the upper device (13), before cleaning gas is supplied to the chamber (5) through the defined between a base plate (10) and the upper device (13) to cool the upper device (13) down to the reaction start temperature or lower.

Description

technical field [0001] The present invention relates to a gas supply unit and a gas supply method. Background technique [0002] Conventionally, a semiconductor manufacturing process using a semiconductor manufacturing apparatus includes a large number of steps of forming a thin film such as a silicon oxide film or a silicon nitride film on the surface of a wafer. For example, a CVD apparatus is used to form a thin film. In the CVD apparatus, one or more process gases composed of elements constituting thin film materials are supplied onto the wafer. In order to form a desired thin film on the wafer surface, a gas supply unit for supplying a gas is installed on the CVD apparatus (for example, refer to Patent Document 1). [0003] Some of the process gases are liquefied at room temperature. In order to maintain the vaporized state of the process gas, the gas supply unit heats the fluid device through which the process gas flows to the same temperature as the process gas thr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
CPCC23C16/4557C23C16/45572C23C16/45574C23C16/45561C23C16/4405G01F15/005H01L21/67017C23C16/45557H01L23/34B05D3/0426B05D3/04
Inventor 稲垣竹矢
Owner CKD