Bifunctional polarizer based on vanadium dioxide and Dirac semimetal composite metasurface

A vanadium dioxide, semi-metal technology, applied in polarizing elements, instruments, optics, etc., can solve the problem of single function of polarizing devices, and achieve the effect of ultra-high polarization efficiency and ultra-high working bandwidth

Active Publication Date: 2020-09-15
SHANDONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Based on the above background, the purpose of the present invention is to solve the problem of single function of the current polarizing device, and provide a multi-functional polarizing device with multi-excitation control mode to promote the further development of polarizing devices

Method used

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  • Bifunctional polarizer based on vanadium dioxide and Dirac semimetal composite metasurface
  • Bifunctional polarizer based on vanadium dioxide and Dirac semimetal composite metasurface
  • Bifunctional polarizer based on vanadium dioxide and Dirac semimetal composite metasurface

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Embodiment 1

[0063] The width W of the Dirac semimetal U-shaped structure is 1.5 μm; the thickness h 1 is 0.2 μm; the distance d between the two U-shaped structures is 3 μm, and they are arranged symmetrically along the two diagonal directions of the device structural unit. The dielectric constant of the silicon dioxide layer is ε=3.8, the side length (unit period) P=22 μm, and the thickness is h 2 = 7 μm. h of the vanadium dioxide layer 3 = 4 μm, side length (unit period) P = 22 μm. The thickness of the wire grid is h 4 =0.2μm, the line width is W 1 = 1.5μm, the period of the wire grid P 1 = 3 μm.

[0064] When realizing the transmissive polarization conversion function, the vanadium dioxide layer is excited and behaves as a dielectric with a conductivity of 200S / m and a Fermi energy level of the Dirac semimetal double "U" structure of 80meV. Such as Figure 4 As shown in (a), in the 1.26-4.09THz frequency band, t xy up to 0.39, corresponding to t yy Approximately 0. Such as ...

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Abstract

The invention relates to the technical field of terahertz functional devices. The invention provides a bifunctional polarizer based on a vanadium dioxide and Dirac semimetal composite metasurface. Thebifunctional polarizer is formed by periodically arranging a plurality of device structure units, each device structure unit comprises a silicon dioxide layer and a vanadium dioxide layer from top tobottom, two Dirac semimetal U-shaped structures are arranged above the silicon dioxide layer, and a wire grid is arranged below the vanadium dioxide layer. According to the invention, a transmissiontype linear polarization conversion function and a reflection type linear polarization conversion function are integrated, and switching between the two polarization conversion functions is realized through phase change switching between a vanadium dioxide insulation state and a metal state. Compared with an existing polarization converter, the bifunctional polarizer provided by the invention performs function integration, and has the advantages of ultrahigh polarization efficiency, ultrahigh working bandwidth and dual-excitation regulation and control.

Description

technical field [0001] The invention relates to the technical field of terahertz functional devices, in particular to a dual-function polarizer based on vanadium dioxide and Dirac semimetal composite metasurfaces. Background technique [0002] Terahertz (THz) waves refer to electromagnetic waves with frequencies in the range of 0.1-10 THz. Due to the special position of terahertz waves in electromagnetic waves, and because of the many excellent characteristics of terahertz waves themselves, terahertz waves have become a current research hotspot, and they are widely used in communication, terahertz imaging, radar detection and other fields. [0003] The development and application of THz technology is inseparable from the research and development of various THz functional devices. Among them, THz polarization control devices have important applications in the fields of THz switches, polarization conversion, wave plates, and asymmetric transmission. They are an indispensable ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/30
CPCG02B5/3058
Inventor 张会云田元仕张艳亮张玉萍
Owner SHANDONG UNIV OF SCI & TECH
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