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Tin plating solution, preparation method and application thereof

A technology of tin plating solution and tin methanesulfonate, applied in semiconductor devices, circuits, etc., can solve the problems of small gaps, uniform thickness of solder bumps, etc., and achieve the effects of reducing height fluctuations, improving current efficiency, and excellent coating properties

Active Publication Date: 2020-09-22
SHANGHAI SINYANG SEMICON MATERIALS
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  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to overcome the defects in the prior art that fluorinated surfactants must be used to make the solder bumps formed by using tin-based electroplating solutions have uniform thickness and small gaps, and provide a tin plating solution , its preparation method and application

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  • Tin plating solution, preparation method and application thereof
  • Tin plating solution, preparation method and application thereof
  • Tin plating solution, preparation method and application thereof

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Embodiment Construction

[0031] The present invention is further illustrated below by means of examples, but the present invention is not limited to the scope of the examples. For the experimental methods that do not specify specific conditions in the following examples, select according to conventional methods and conditions, or according to the product instructions.

[0032] 1. Formation of copper pillars

[0033] Copper pillars are formed on the copper UBM layer of the flip chip semiconductor package. Specifically, with CuSO containing 4 ·5H 2 O, H 2 SO 4 , HCl, H 2 A commercially available copper sulfate-based plating solution of O and additives (SYS2310, Shanghai Xinyang Semiconductor Co., Ltd., China) was stirred at room temperature and heated at 10 A / dm 2 A 12-inch patterned wafer was electroplated at a current density of 12 inches to form copper pillars until the height of the copper pillars reached 10 μm; copper electroplating was performed according to the manufacturer's recommendation...

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Abstract

The invention discloses a tin plating solution, a preparation method and application thereof. The composition raw materials of the tin plating solution comprise the following components in terms of 1Lof the tin plating solution: 30-120g / L of tin methanesulfonate, 60-300g / L of methanesulfonic acid, 0.1-100mg / L of povidone K45, 0.01-10mg / L of low molecular polyether, and water, wherein the low molecular polyether is diamine phenolic ether and / or maleimide polyethylene glycol monomethyl ether. The tin plating solution provided by the invention can also be used for forming tin solder bumps on ametal UBM layer for a flip chip packaging body without a fluorinated surfactant, the cost is low, and the process is simple. The tin plating solution is beneficial to current efficiency, does not produce cracks in an intermetallic compound layer and gaps in bumps, can be used for forming bumps with high flatness and small height fluctuation, and is suitable for high-speed electroplating.

Description

technical field [0001] The invention relates to a tin plating solution, its preparation method and application. Background technique [0002] Flip-chip conductive interconnect bumps are widely used in wafer-level packaging processes. These interconnect bumps serve as the electrical and physical connection of the semiconductor component to the printed wiring board. Typically tin / lead alloys are used to form solder bumps; however, due to the toxicity of lead, the industry has attempted to find acceptable lead-free pure tin or tin alloys that can be readily co-deposited. [0003] In bump electroplating, bump thickness uniformity and voids are the two most important problems. The industry is committed to developing plating solutions or additives to solve these two problems. Patent CN105316711A discloses a tin alloy electroplating solution for solder bumps containing perfluoroalkyl surfactants, which is used to form tin-based electroplating solutions for solder bumps in flip-ch...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/32C25D7/12
CPCC25D3/32C25D7/12
Inventor 王溯孙红旗
Owner SHANGHAI SINYANG SEMICON MATERIALS
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