Rectangular waveguide tube core manufacturing method based on SOI deep silicon etching and waveguide assembly

Abstract

The invention discloses an SOI deep silicon etching-based rectangular waveguide tube core manufacturing method and a waveguide assembly. The method comprises steps of employing a deep silicon etchingmethod to etch a waveguide cavity in an SOI substrate, enabling the waveguide cavity to be of a groove structure, enabling a part of central axis of the groove structure to be an arc line, and preparing a metal layer on a surface of the SOI substrate where the waveguide cavity is etched, preparing a metal layer on a surface of a silicon wafer, fitting the metal layer on the surface of the siliconwafer with the metal layer on the surface of the SOI substrate to seal the waveguide cavity to form a stacked body, carrying out pressing treatment of the stacked body, namely applying pressure to thestacked body, and heating so that the metal layer on the surface of the silicon wafer and the metal layer on the surface of the SOI substrate are mutually diffused and combined, and cutting the laminated stack according to the shape of the waveguide cavity, exposing openings at two ends of the central axis of the waveguide cavity to obtain a waveguide tube core precursor, and preparing a metal layer on the surface of the waveguide tube core precursor to obtain the waveguide tube core. The method provided by the invention can avoid a problem that the right-angle part of the waveguide inner cavity is arc-shaped.

Description

technical field [0001] The invention relates to a method for manufacturing a rectangular waveguide core based on SOI deep silicon etching and a waveguide component. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] Terahertz micro-metal components have contradictions between the large size of the whole piece and the small size of the waveguide, and the requirements for micron-level shape and position tolerances, and there is a problem that it is difficult to form a three-dimensional, curved three-dimensional structure. According to the knowledge of the inventors of the present invention, currently terahertz micro metal parts are usually processed by milling. However, the in...

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Problems solved by technology

[0003] Terahertz micro metal parts have contradictions between the large size of the whole piece and the small size of the waveguide, and the requirements for micron-level shape and position tolerances, and there are problems that it is difficult to form three-dimensional and curved three-dimensional structures

According to the knowledge of the inventors of the present invention, currently terahertz micro metal parts are usually processed by milling. However, the inventors of the present invention have found that the conventional milling process is unstable, the service life of the micro-diameter milling cutter is short, and the shape and position accuracy is very low. It is difficult to guarantee, and there are problems such as the horn mouth and the right angle of the waveguide cavity being arc-shaped. Traditional processing technology can only process a single part and due to the above shortcomings, the shape, position and size of each waveguide core are poorly consistent, and the processing efficiency is low.

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