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Edge-emitting single-mode laser device and manufacturing method

A laser and edge-emitting technology, which is applied in the direction of lasers, semiconductor lasers, phonon exciters, etc., can solve the problems of light wave transmission loss and difficulties in the manufacturing process of emitting single-mode lasers.

Inactive Publication Date: 2020-09-25
江西铭德半导体科技有限公司
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Problems solved by technology

[0005] In view of the above situation, it is necessary to provide a side-emitting single-mode laser and its manufacturing method to solve the difficulty in manufacturing the single-mode emitting laser and the problem of light wave transmission loss

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  • Edge-emitting single-mode laser device and manufacturing method
  • Edge-emitting single-mode laser device and manufacturing method
  • Edge-emitting single-mode laser device and manufacturing method

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Embodiment Construction

[0044] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Embodiments of the invention are shown in the accompanying drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing the embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0045] It should be noted that when an element is referred to as being “fixed on” another element, it may be directly on the other element or there may be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and similar expressions are used herein for purposes of illustration only. ...

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Abstract

The invention relates to an edge-emitting single-mode laser device and a manufacturing method thereof. The edge-emitting single-mode laser comprises: an N-type electrode layer; an N-type substrate arranged on the N-type electrode layer; an N-type buffer layer arranged on the N-type substrate; an N-type covering layer arranged on the buffer layer; a lower waveguide layer arranged on the covering layer, wherein the lower waveguide layer is not doped; an active region arranged on the lower waveguide layer; an upper waveguide layer arranged on the active region; a P-type covering layer arranged onthe upper waveguide layer, wherein a current limiting window is arranged in the P-type covering layer; a P-type contact layer arranged on the P-type covering layer; and a P-type electrode layer arranged on the P-type covering layer. Compared with a conventional edge-emitting single-mode laser device, the width of the ridge waveguide is obviously increased, and process production and yield improvement are facilitated; and a current limiting window is formed in a P-type covering layer in the ridge waveguide, so that the injection range of carriers and the size of light spots in an active regionare controlled through the current limiting window so as to control the output mode of a light field.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to an edge-emitting single-mode laser and a manufacturing method. Background technique [0002] The semiconductor edge-emitting laser is a relatively traditional semiconductor laser. The emitting surface is the end face of the chip, which is different from the current popular surface-emitting laser. The emitting surface is the surface of the chip. The end face of the edge-emitting laser is generally the cleavage surface of the semiconductor crystal. Since the cleavage surface of the crystal is very flat and smooth, it is a very good reflective surface, so the two cleavage end faces of the chip naturally form the resonant cavity of the edge-emitting laser. However, in the actual operation process, the two cleaved end faces will be coated, on the one hand to protect the end faces, and to optimize the resonant cavity and luminous efficiency. [0003] According to the tran...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/12H01S5/20H01S5/22
CPCH01S5/1237H01S5/2018H01S5/221
Inventor 柯毛龙李春勇舒凯仇伯仓徐化勇冯欧
Owner 江西铭德半导体科技有限公司
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