adhesive tape
A tape and adhesive layer technology, applied in the direction of adhesives, film/sheet adhesives, non-fiber pulp addition, etc., can solve the problems affecting the long-term service life and quality of products, long-term revenue attenuation, etc.
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[0019] A kind of embodiment of adhesive tape disclosed by the present invention, adhesive tape comprises substrate, release layer, the adhesive layer that is formed on one side of release layer on the substrate and the semiconductor layer that is formed on the other side of substrate, and substrate comprises polyimide substrate layer or at least one or more of conductive cloth or Nomex paper, that is, basically forming a heat-insulating and anti-static tape including a release layer, an adhesive layer, a substrate, and a semiconductor layer in sequence;
[0020] It should be noted that, regarding the semiconductor layer, it mainly plays the role of removing static electricity, rather than being used as a conventional semiconductor. This is due to the fact that the performance of traditional antistatic adhesives is prone to decline due to aging during long-term use. At the same time, considering that crystalline silicon is a semiconductor, its electrical conductivity is higher t...
Embodiment 1
[0025] In this embodiment, amorphous silicon with a thickness of 10 μm is used as the substrate for deposition. The deposition chamber is deposited under the conditions of a pressure of 0.1 TorrTorr, a reaction gas of silane, a flow rate of the reaction gas of 10 sccm, and a temperature of 400 ° C. The single deposition time After 30 minutes, the test shows that the particle size of the formed silicon particles is 10 μm, the silicon particles occupy 5% of the surface area of the deposition side (the substrate is deposited on one side), and the conductivity is about 1*10 6 Siemens / meter, meet anti-static requirements.
Embodiment 2
[0027] In this embodiment, amorphous silicon with a thickness of 40 μm is used as the substrate for deposition. The deposition chamber is deposited under the conditions of a pressure of 2 Torr, a reaction gas of silane, a flow rate of the reaction gas of 80 sccm, and a temperature of 500° C., with a single deposition time of 20 minutes. , the test shows that the particle size of the formed silicon particles is 5 μm, the silicon particles occupy 10% of the surface area of the deposition side (the substrate is deposited on one side), and the conductivity is about 3*10 6 Siemens / meter, meet anti-static requirements.
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