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Semiconductor device

A technology of semiconductors and conductors, used in semiconductor devices, electrical components, circuits, etc., can solve the problems of increasing the amount of carriers, increasing the time, and increasing the cut-off loss.

Pending Publication Date: 2020-09-29
KK TOSHIBA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the amount of accumulated carriers is increased to achieve low on-resistance, the amount of carriers to be discharged at the time of turn-on will increase.
Therefore, the turn off time becomes longer and the turn off loss increases

Method used

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  • Semiconductor device
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Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0016] figure 1 It is a schematic cross-sectional view showing the semiconductor device 1 according to the first embodiment. The semiconductor device 1 is, for example, an IGBT.

[0017] Such as figure 1 As shown, the semiconductor device 1 includes a semiconductor portion 10 , an emitter 20 (first electrode), a collector 30 (second electrode), a first gate 40 , a second gate 50 , and a third gate 60 .

[0018] The semiconductor portion 10 is, for example, silicon. The semiconductor portion 10 has a first surface 10T and a second surface 10B. The second surface 10B is the back side of the first surface 10T. Emitter 20 is provided on first face 10T. Collector electrode 30 is provided on second face 10B. The emitter 20 and the collector 30 include, for example, at least one selected from the group consisting of aluminum (Al), titanium (Ti), nickel (Ni), tungsten (W), gold (Au), and polysilicon.

[0019] The first gate 40 is disposed, for example, inside the trench GT1 pro...

no. 2 approach

[0081] Figure 6 It is a schematic cross-sectional view showing the semiconductor device 4 according to the second embodiment.

[0082] exist Figure 6 In the illustrated semiconductor device 4, a third gate 80 having a trench gate structure is provided. The third gate 80 is arranged inside the trench GT4 provided on the second surface 10B side of the semiconductor portion 10 . The third gate 80 is electrically insulated from the semiconductor portion 10 via a gate insulating film 81 .

[0083] Such as Figure 6 As shown, the third gate 80 is disposed between the semiconductor portion 10 and the collector 30 . The third gate electrode is electrically insulated from the collector electrode 30 via the insulating film 83 . Furthermore, the third gate 80 is arranged to face the n-type buffer layer 19 , the p-type collector layer 21 , and the n-type collector layer 23 via the gate insulating film.

[0084] The p-type collector layer 21 is provided between the n-type buffer la...

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Abstract

A semiconductor device includes: a semiconductor part including a first layer of a first conductivity type and having a first surface and a second surface on an opposite side; a first electrode on thefirst surface; a first control electrode provided between the first electrode and the semiconductor part; a second control electrode provided between the first electrode and the semiconductor part and to which a bias voltage is applied independently of the first control electrode; a third control electrode provided on the second surface side; and a second electrode provided on the second surface.The semiconductor part includes: a second layer of a second conductivity type selectively provided between the first layer and the first electrode; a third layer of the first conductivity type selectively provided between the second layer and the first electrode; a fourth layer of the first conductivity type provided between the second and third control electrodes and the first layer; a fifth layer of the second conductivity type provided between the fourth layer and the second electrode; and a sixth layer of the first conductivity type, at least a part of which is provided between the fifthlayer and the second electrode. The third control electrode faces a portion of the fifth layer.

Description

[0001] This application claims the priority of the basic application based on Japanese Patent Application No. 2019-50052 (filing date: March 18, 2019). This application incorporates the entire contents of the above-mentioned basic application by referring to the above-mentioned basic application. technical field [0002] Embodiments relate to semiconductor devices. Background technique [0003] As a semiconductor device that controls a large current at a high withstand voltage of 600 V or higher, for example, an insulated gate bipolar transistor (hereinafter referred to as an Insulated Gate Bipolar Transistor: IGBT) is used. IGBTs are used for, for example, power conversion, and in order to improve conversion efficiency, both low stability loss (ON resistance) and low switching loss (fast switching speed) are desired. [0004] With regard to IGBTs, in order to reduce on-resistance, in recent years, there has been an increasing number of IGBTs having a trench gate structure ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06
CPCH01L29/7397H01L29/0657H01L29/407H01L29/0834Y02B70/10H01L29/083
Inventor 末代知子岩鍜治阳子
Owner KK TOSHIBA