Methods of forming metal chalcogenide pillars
A metal sulfur and column technology, which is applied in the direction of metal material coating process, electric solid device, semiconductor device, etc., can solve the problems of inherent structure degradation, column bending, uneven growth, etc.
Pending Publication Date: 2020-10-09
APPLIED MATERIALS INC
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Problems solved by technology
[0004] However, there are some challenges with this process because of the rate and amount of volume expansion of the metal to form metal oxide columns
First, rapid changes in pressure can sometimes lead to degradation of the intrinsic structure
This can cause buckling or tilting of the column
Second, rapid changes in volume sometimes lead to uneven growth
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[0014] In the following description, numerous details are set forth, such as materials, chemicals, dimensions of components, etc., in order to provide a thorough understanding of one or more embodiments of the present disclosure. One of ordinary skill in the art to which this disclosure pertains will understand that one or more embodiments of the present disclosure may be practiced without these details. In other instances, details of semiconductor fabrication processes, techniques, materials, equipment, etc. have not been described in order to avoid unnecessarily obscuring the description. Given the included description, one of ordinary skill in the art to which this application pertains will be able to implement the appropriate function without undue experimentation.
[0015] While certain exemplary embodiments of the present disclosure have been described and illustrated in the drawings, it should be understood that these embodiments are illustrative only and not limiting o...
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Methods of producing a self-aligned structure comprising a metal chalcogenide are described. Some methods comprise forming a metal-containing film in a substrate feature and exposing the metal-containing film to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise forming a metal-containing film in a substrate feature, expanding the metal-containing film to form a pillar and exposing the pillar to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise directly forming a metal chalcogenide pillar in a substrate feature to form a self-aligned structure comprising a metal chalcogenide. Methods of forming self-aligned vias are also described.
Description
technical field [0001] Embodiments of the present disclosure generally relate to methods of forming metal chalcogenide pillars extending from substrate features. Additional embodiments relate to methods of creating self-aligned vias. Background technique [0002] Self-aligned metal oxide pillars can be formed by oxidation of a gap-fill metal film. Metal is deposited on the hole or trench structure, which is then oxidized to form a metal oxide. Volume expansion during oxidation pushes the pillars out of the pores or trenches. The pillars grow selectively from the bottom upwards only from the metal. [0003] Tungsten oxide has been used to form self-aligned pillars because of its high thermal expansion and high Young's modulus or stiffness. Tungsten oxide can be formed by oxidizing tungsten metal with oxygen at high temperature. [0004] However, there are some challenges using this process because of the rate and amount of volume expansion of the metal to form metal oxid...
Claims
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Login to View More IPC IPC(8): H01L21/768H01L21/02
CPCC23C14/0623C23C16/305H01L21/76897C23C14/5866C23C14/14C23C14/046C23C16/045H01L21/321H01L21/76877H01L21/76885H01L21/76816H01L21/76805H01L21/02205H01L2924/01074H01L2924/01042H01L2924/0111H01L21/76802H01L21/32133H01L21/02568
Inventor 阿米里塔·B·穆利克斯里尼瓦·甘迪科塔
Owner APPLIED MATERIALS INC