A multi-channel temperature control device for semiconductor coating equipment

Abstract

The invention discloses a multi-channel temperature control device for semiconductor coating equipment, in the field of temperature control, a multi-channel temperature control device for semiconductor coating equipment, through the setting of temperature control stacked channel layers and selection of heat-conducting rods, when When the temperature needs to be raised, the heat-conducting gas runs from bottom to top, and the air-inflating layer will be attached to the multi-channel board. At this time, some holes on the air-inflating layer are blocked, and the heat-conducting gas enters the upper part of the temperature control device that is in contact with the semiconductor. The speed is slowed down, so that the overall temperature rise speed of the temperature control device can be effectively controlled, so that the semiconductor is not easy to cause film failure due to excessive temperature rise, and the success rate of semiconductor coating is effectively improved. The air layer bulges downward until it is pierced by the selected heat conducting rod, and the heat conducting gas directly contacts with the selected heat conducting rod to transfer heat downward, thereby significantly increasing the speed of cooling and reducing the time required for cooling, thereby effectively improving the temperature of the semiconductor in the same time. Coating efficiency.

Description

Technical field [0001] The present invention relates to temperature control, and more particularly, to a multi-channel temperature control apparatus for a semiconductor coating equipment. Background technique [0002] The semiconductor devices often requires the wafer and the chamber is heated or maintained at a temperature required for the deposition reaction during the deposition reaction, heating the heating plate must have a structure to meet the purpose of preheating the wafer. To solve the problems the heating plate during the process of slow cooling excessive temperature rise, the cooling by the temperature control system to control the temperature of the hot plate, the temperature of the heating plate to ensure stability during the process. In order to better control the temperature of the semiconductor, we need the temperature of the semiconductor is transmitted to the heating plate, to control the temperature of the semiconductor surface by controlling the temperature o...

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Problems solved by technology

[0003] For semiconductor thin film deposition equipment, plasma will participate in the deposition reaction during the deposition process. Due to the release of plasma energy and the energy release of the reaction between chemical gases, the temperature of the heating plate and wafer will increase with the increase of radio frequency and process time. It will continue to rise; if the process is carried out at the same temperature, it is necessary to wait for the heating plate to drop to the same temperature before proceeding, which will consume a lot of time and the production capacity of the equipment is relatively low

If the temperature of the wafer and heating plate is raised too fast, the temperature of the wafer and heating plate will exceed the temperature that the film needs to withstand, causing the film to fail

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