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A new p-type tunneling contact layer epitaxy method for ultraviolet LED

A contact layer, p-type technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as low injection efficiency and limit the efficiency of ultraviolet LEDs, and achieve the effect of improving efficiency

Active Publication Date: 2022-04-05
佛山紫熙慧众科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the existing ultraviolet LEDs have the problem of low injection efficiency of holes and heavy metal electrodes into nitride materials, which limits the efficiency improvement and application of nitride-based ultraviolet LEDs to a certain extent.

Method used

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  • A new p-type tunneling contact layer epitaxy method for ultraviolet LED

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Embodiment Construction

[0028] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0029] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation indicated by rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc. The positional relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating ...

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Abstract

The invention discloses a novel p-type tunneling contact layer epitaxy method for ultraviolet LEDs, which forms an AlN / InGaN superlattice tunneling heterostructure on the surface of the p-type tunneling contact layer of ultraviolet LEDs to improve hole heavy metal The injection efficiency of the electrode into the nitride material is used to promote the efficiency improvement and application of the nitride-based ultraviolet LED.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a novel p-type tunneling contact layer epitaxy method for ultraviolet LEDs. Background technique [0002] Ultraviolet light emitting diode (light emitting diode, hereinafter referred to as LED), because of its short wavelength, high photon energy, and uniform beam, has important applications in the fields of physical sterilization, high color rendering index lighting, and high-density optical storage. At present, a large number of researches have made important breakthroughs in crystal quality, high A1 composition and short-wavelength structure design, and successfully prepared deep ultraviolet LED devices below 300 nanometers to achieve milliwatt-level power output and reliability. great progress has been made. [0003] However, existing ultraviolet LEDs have the problem of low injection efficiency of holes and heavy metal electrodes into nitride materials, which...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/32H01L33/00
CPCH01L33/06H01L33/32H01L33/005
Inventor 周启航
Owner 佛山紫熙慧众科技有限公司