Preparation method of heterogeneous substrate film

Abstract

The embodiment of the invention discloses a preparation method of a heterogeneous substrate film. The method comprises the steps of obtaining a first substrate and a second substrate, performing firstion implantation on the first substrate, forming a first damage layer at a first preset depth, bonding the first substrate and the second substrate; and performing annealing treatment on the bonded structure based on a first preset temperature, stripping the first substrate along the first damage layer; obtaining a second heterogeneous substrate, performing second ion implantation on the second heterogeneous substrate, forming a second damage layer at a second preset depth, wherein the implantation dose of the second ion implantation is smaller than that of the first ion implantation; whereinthe injection energy is low, the second preset depth is smaller than the first preset depth, annealing the structure after secondary injection based on the second preset temperature to obtain a thirdheterogeneous substrate, and polishing the third heterogeneous substrate when the second preset temperature is higher than the first preset temperature to obtain a heterogeneous substrate film. Basedon the embodiment of the invention, the damage layer can be thinned, and the surface uniformity of the heterogeneous film is improved.

Description

Technical field [0001] The invention relates to the field of material preparation, in particular to a method for preparing a heterogeneous substrate film. Background technique [0002] Since lithium tantalate crystals and lithium niobate crystals have piezoelectric, ferroelectric, acoustic, pyroelectric, nonlinear optics, and optoelectronic properties, silicon-based lithium tantalate films and silicon-based lithium niobate films can be used as radio frequency filters, Pyroelectric detectors, surface acoustic filters and other devices provide material support. Currently, ion beam stripping technology is mainly used to achieve heterogeneous integration of silicon substrates and piezoelectric substrates such as lithium tantalate and lithium niobate. In the existing preparation methods, ions are usually implanted into lithium tantalate or niobate. In piezoelectric substrates such as lithium, a piezoelectric substrate with a damaged layer is obtained, which is then bonded to a silico...

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Problems solved by technology

[0003] The silicon-based lithium tantalate film or silicon-based lithium niobate film obtained by this method needs chemical mechanical polishing to remove the film surface damage layer generated by ion implantation. The thicker surface damage layer will not only increase the mechanical polishing time, but also increase the mechanical polishing time. And it will also reduce the surface uniformity of the polished film, which will affect the performance of the corresponding filter or detector device.

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