A kind of preparation method of heterogeneous substrate thin film

Abstract

A method for preparing a heterogeneous substrate thin film disclosed in an embodiment of the present application includes obtaining a first substrate and a second substrate, performing a first ion implantation on the first substrate, and forming a second substrate at a first preset depth. a damaged layer, the first substrate and the second substrate are bonded, the bonded structure is annealed based on the first preset temperature, and the first substrate is peeled off along the first damaged layer to obtain a second A second ion implantation is performed on the second heterogeneous substrate to form a second damaged layer at a second preset depth. The second ion implantation has a smaller implantation dose and lower implantation energy than the first ion implantation. The preset depth is less than the first preset depth, and the structure after the secondary implantation is annealed based on the second preset temperature to obtain a third foreign substrate, the second preset temperature is higher than the first preset temperature, and the second preset temperature is higher than the first preset temperature. The three heterogeneous substrates are polished to obtain a heterogeneous substrate film. Based on the embodiments of the present application, the damaged layer can be thinned and the surface uniformity of the heterogeneous thin film can be improved.

Description

technical field [0001] The invention relates to the field of material preparation, in particular to a method for preparing a heterogeneous substrate thin film. Background technique [0002] Since lithium tantalate crystals and lithium niobate crystals have piezoelectric, ferroelectric, acoustic, pyroelectric, nonlinear optics, photoelectric and other properties, silicon-based lithium tantalate thin films and silicon-based lithium niobate thin films can be used as radio frequency filters, Devices such as pyroelectric detectors and surface acoustic filters provide material support. At present, ion beam lift-off technology is mainly used to realize the heterogeneous integration of silicon substrates and piezoelectric substrates such as lithium tantalate and lithium niobate. In the existing preparation methods, ions are usually implanted into lithium tantalate or niobate In piezoelectric substrates such as lithium, obtain a piezoelectric substrate with a damaged layer, then bon...

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Problems solved by technology

[0003] The silicon-based lithium tantalate film or silicon-based lithium niobate film obtained by this method needs chemical mechanical polishing to remove the film surface damage layer generated by ion implantation. The thicker surface damage layer will not only increase the mechanical polishing time, but also increase the mechanical polishing time. And it will also reduce the surface uniformity of the polished film, which will affect the performance of the corresponding filter or detector device.

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