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Heat removal device for etching treatment of silicon material and working method of heat removal device

A technology of etching treatment and heating device, which is applied in the field of single crystal silicon preparation, and can solve problems such as production accidents, corrosion and damage of heat exchangers, corrosion of condensers, etc.

Pending Publication Date: 2020-10-23
XIAN ESWIN MATERIAL TECH CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0014] However, since the etching uses a mixed solution of hydrofluoric acid and nitric acid, the mixed solution is highly corrosive, which not only easily causes corrosion and damage to the heat exchanger, but also easily penetrates into the heat exchanger, and the ethylene glycol used as a condensing agent Violent reaction occurs, corrodes the condenser, and causes production accidents

Method used

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  • Heat removal device for etching treatment of silicon material and working method of heat removal device
  • Heat removal device for etching treatment of silicon material and working method of heat removal device
  • Heat removal device for etching treatment of silicon material and working method of heat removal device

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Embodiment 1

[0074] A heat removal device for etching silicon-based materials, comprising:

[0075] Reagent tank;

[0076] The first heat exchanger installed in the reagent tank, the medium circulating in the first heat exchanger is water, and the water inlet and outlet of the first heat exchanger are connected to the intermediate heat exchange tank to form a circulation Circuit; the capacity of the reagent tank is about 80L.

[0077] A pump is arranged between the water inlet of the first heat exchanger and the intermediate heat exchange tank to drive the flow of the medium in the first heat exchanger. The first heat exchanger is a spiral serpentine tube heat exchanger made of PFA. The inner diameter of the spiral serpentine tube is 12.7mm, the thickness is 1.5mm, and the length is 10m. The heat transfer area at this time is 3.19m 2 .

[0078] A second heat exchanger is arranged in the intermediate heat exchange tank, and the intermediate heat exchange tank is filled with water;

[...

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Abstract

The invention relates to the technical field of monocrystalline silicon preparation, in particular to a heat removal device for etching treatment of a silicon material and a working method of the heatremoval device. The heat removal device for etching treatment of silicon material comprises: a reagent tank: a first heat exchanger arranged in the reagent tank; and a condenser, wherein an intermediate heat exchange tank is arranged between the reagent tank and the condenser, a medium circulating in the first heat exchanger is water, a water inlet and a water outlet of the first heat exchanger are both connected with the intermediate heat exchange tank to form a circulation loop, a second heat exchanger is arranged in the intermediate heat exchange tank, the intermediate heat exchange tank is filled with water, and the second heat exchanger is connected with the part, outside the intermediate heat exchange tank, of the condenser. The heat removal device is good in heat removal effect, high in safety and long in service life of all parts.

Description

technical field [0001] The invention relates to the technical field of monocrystalline silicon preparation, in particular to a heat removal device used for etching silicon-based materials and a working method of the heat removal device. Background technique [0002] The methods for producing monocrystalline silicon mainly include Czochralski method, zone melting method and epitaxy method. Among them, the Czochralski method is used to grow monocrystalline silicon rods. Monocrystalline silicon grown by the Czochralski method is mainly used in semiconductor integrated circuits, diodes, epitaxial wafer substrates, solar cells, etc., with a market share of more than 80%. [0003] The production process of the Czochralski method mainly includes the following steps: [0004] (1) Pretreatment of silicon-based materials: including etching, cleaning, drying, weighing, and packaging; [0005] (2) Furnace the pretreated silicon-based material and vacuumize; [0006] (3) Melt materia...

Claims

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Application Information

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IPC IPC(8): C30B35/00C30B15/00C30B29/06
CPCC30B35/007C30B15/00C30B29/06
Inventor 宮尾秀一
Owner XIAN ESWIN MATERIAL TECH CO LTD
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