Through hole filling method and structure

A filling method and support structure technology, which is applied to semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problem of low filling yield of through holes

Active Publication Date: 2020-10-27
NAT CENT FOR ADVANCED PACKAGING
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a through hole filling method and structure to solve the probl

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  • Through hole filling method and structure
  • Through hole filling method and structure

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[0041] The through hole filling method and structure proposed by the present invention will be further described in detail below in conjunction with the drawings and specific embodiments. According to the following description and claims, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and all use imprecise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.

[0042] In addition, unless otherwise specified, features in different embodiments of the present invention can be combined with each other. For example, a feature in the second embodiment can be used to replace the corresponding or functionally same or similar feature in the first embodiment, and the obtained embodiment also falls within the scope of disclosure or description of the present application.

[0043] The core idea of ​​the present invention...

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Abstract

The invention provides a through hole filling method and structure, and the method comprises the steps: filling a through hole with colloid, and enabling the colloid to be semi-cured; removing the colloid on the surface of the substrate, wherein the colloid in the through hole sinks inwards; solidifying the colloid; punching the solidified colloid to form a standard hole with the diameter smallerthan that of the through hole; carrying out metal deposition to form a transition structure, wherein the transition structure wraps the side wall of the standard hole, the surface of the substrate andthe outer surface of the solidified colloid; forming an electroplated metal layer through a metal electroplating process, and filling the standard hole; and removing the transition structure and theelectroplated metal layer on the upper surface and the lower surface of the substrate; according to the invention, the problems that holes occur in large-aperture holes with high depth-to-width ratio,surface plating layers are too thick and the like are solved, the yield is high, the cost is low, and the realizability is good.

Description

technical field [0001] The invention relates to the technical field of semiconductor packaging, in particular to a through hole filling method and structure. Background technique [0002] In the manufacturing process of substrates (such as organic substrates, glass substrates or ceramic substrates), it is usually necessary to perform through-hole processing on thick substrates and metal plating to realize the interconnection of the electrical properties of the upper and lower surfaces. Full-hole electroplating for small-aperture holes can obtain good filling effect, but for large-aperture (≥50um) high-aspect-ratio holes, if a similar process is used, problems such as voids and over-thickness of the surface coating are likely to occur, and the yield rate is low. , high cost and poor realizability. Therefore, it is usually implemented by first depositing thin-walled metal and then plugging or only depositing thin-walled metal without filling. Unfilled vias cannot achieve ver...

Claims

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Application Information

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IPC IPC(8): H01L21/48H01L23/498
CPCH01L21/486H01L23/49827H01L23/49894
Inventor 武晓萌于中尧王启东曹立强
Owner NAT CENT FOR ADVANCED PACKAGING
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