Memory structure and manufacturing method thereof

Abstract

The invention discloses a memory structure and a manufacturing method thereof. The memory structure comprises a plurality of storage units with the same structure; each storage unit comprises a storage module, a plastic package layer covers the storage module, a connecting piece is arranged at the bottom of the storage module, a metal column is arranged on the side edge of the storage module, andthe connecting piece extends to the side edge of the storage module and is electrically connected with the metal column; the plurality of storage units with the same structure are stacked, and the storage units positioned at the lower part are electrically connected with the connecting pieces of the storage units positioned at the upper part through the metal column. According to the invention, the capacity of the memory is expanded by stacking the memory modules, external leads are not needed, the interference among the leads is avoided, the manufacturing of the high-capacity memory is realized without a complex packaging process, complex chip assembly equipment is not needed, the packaging process is simple, and the cost is low.

Description

technical field [0001] The invention relates to the field of memory technology, in particular to a memory structure and a manufacturing method thereof. Background technique [0002] In the technical field of memory, the memory capacity is usually expanded by stacking memory modules. With the advent of the digital age, there is a greater and greater demand for data storage, which also leads to an increasing demand for memory capacity. In the prior art, for memory expansion methods, taking NAND Flash packaging as an example, it is generally divided into two types: one is to superimpose memory chips (memory modules) and interconnect them by bonding, so as to increase the overall capacity of the memory, such as figure 1 As shown, but the interconnection between the memory chips is long, and the leads are easy to interfere; the other is to directly interconnect the NAND Flash chips through silicon vias (Through Silicon Via, TSV), such as figure 2 shown. However, NAND Flash ch...

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Problems solved by technology

[0003] Therefore, the present invention solves the problem that memory chips are interconnected by bonding wires in the prior art, and leads are easily interfered with, thereby providing a memory structure and a manufacturing method thereof

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