Modular crucible device for silicon carbide crystal growth and growth method thereof

Abstract

The invention discloses a modular crucible device for silicon carbide crystal growth and a growth method thereof, belonging to the field of silicon carbide crystal growth devices. The technical problem to be solved by the invention is how to provide a stable crystal growth thermal field. The device comprises a crucible bottom, wherein the crucible bottom is connected with a crucible body, a crucible support is arranged at the upper end of the crucible body, seed crystals are placed on the upper layer of the crucible support, silicon carbide polycrystalline blocks are placed on the lower layerof the crucible support, silicon carbide powder is placed at the inner bottom of the crucible body, and a crucible cover covers the crucible body. The device disclosed by the invention is modularized,can be properly combined according to actual requirements, allows a more accurate crucible to be obtained and realizes gas diversion in a reaction chamber along with single crystal growth, the silicon carbide polycrystalline blocks in the crucible can be adjusted and repeatedly used, and environmental stability of a crucible thermal field is realized. The device is used for silicon carbide crystal growth.

Description

technical field [0001] The invention belongs to the field of silicon carbide crystal growth devices; in particular, it relates to a modular crucible device for growing silicon carbide crystals and a growth method thereof. Background technique [0002] When using the PVT method to prepare silicon carbide (SiC) single crystals, the crucible made of high-temperature resistant materials provides a relatively closed space for the reaction and deposition of gas phase components. The crucible often needs to be heated above 2000°C for more than 100 hours. Silicon carbide crystals are obtained from the powder, and the raw materials in the crucible gradually decrease with the formation of single crystals, which leads to changes in the environment of the thermal field, and cannot obtain a stable thermal field for long crystals, resulting in uneven reaction and deposition of gas phase components, which cannot Satisfying the need for process optimization to adjust the thermal field at an...

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Problems solved by technology

[0002] When using the PVT method to prepare silicon carbide (SiC) single crystals, the crucible made of high-temperature resistant materials provides a relatively closed space for the reaction and deposition of gas phase components. The crucible often needs to be heated above 2000°C for more than 100 hours. Silicon carbide crystals are obtained from the powder, and the raw materials in the crucible gradually decrease with the formation of single crystals, which leads to changes in the environment of the thermal field, and cannot obtain a stable thermal field for long crystals, resulting in uneven reaction and deposition of gas phase components, which cannot To meet the requirement of process optimization to adjust the thermal field at any time, to a certain extent, the speed of process optimization is limited, which is not conducive to the preparation of high-quality single crystal

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