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ITO annealing process

An annealing process, an annealing technology, applied to electrical components, circuits, heat treatment equipment, etc., can solve the problems of long annealing time, high comprehensive cost, and impact on yield, and achieve the effect of reducing annealing time and increasing annealing yield

Active Publication Date: 2020-10-30
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the annealing time is relatively long, the yield will be greatly affected, the overall cost is relatively high, and there are still great challenges for large-scale industrial applications.

Method used

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Embodiment Construction

[0017] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only parts related to the present invention are shown in the drawings but not all content. Before discussing the exemplary embodiments in more detail, it should be mentioned that some exemplary embodiments are described as processes or methods depicted as flowcharts. Although the flowcharts describe various operations (or steps) as sequential processing, many of the operations may be performed in parallel, concurrently, or simultaneously. In addition, the order of operations can be rearranged. The process may be terminated when its operations are complete, but may also have additional steps not included in the figure...

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Abstract

The invention discloses an ITO annealing process. The ITO annealing process comprises the steps of S11, fixing a workpiece to be annealed to a carrying table, wherein the workpiece to be annealed comprises an ITO film, and the ITO film is located on the side, which is away from the carrying table, of the workpiece to be annealed; S12, aligning the geometric center of a light spot formed by a laserbeam on the surface of the ITO film and the geometric center of a first surface, wherein the first surface is the surface, which is away from the carrying table, of the ITO film; S13, adjusting the size of the light spot to enable the diameter of the light spot to be equal to the length of a first line segment, wherein the first line segment is the shortest line segment in multiple line segmentspenetrating through the geometric center of the first surface and with the two ends located on the edge of the first surface; and S14, exposing the position of the light spot on the ITO film for a preset time length. According to the technical scheme provided by the embodiment of the invention, the whole to-be-annealed area of the ITO film can be annealed at the same time, the annealing time of the ITO film is shortened, and the annealing yield of the ITO film is improved.

Description

technical field [0001] The embodiments of the present invention relate to the field of annealing technology, in particular to an ITO annealing technology. Background technique [0002] Indium tin oxide (Indium Tin Oxides, ITO) is obtained from indium oxide by doping tin. It is an n-type metal compound semiconductor with good transparent conductivity. It has a band gap, high visible light transmittance, low resistivity, and high mechanical hardness. And the advantages of high chemical stability, are widely used in flat panel display, conductive glass, solar cells, transparent electrodes and other fields. [0003] In order to improve the crystalline state of the ITO thin film, reduce lattice defects, and improve the performance of the ITO device, after the ITO thin film is formed, it needs to be annealed. In the prior art, thermal annealing or step-scanning laser annealing is usually used to anneal the ITO film. The thermal annealing process needs to heat the ITO film to be a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00
CPCH01B13/0016H01B13/003
Inventor 谷全超
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD