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A kind of ito annealing process

An annealing process and annealing technology, used in electrical components, cable/conductor manufacturing, and heat treatment equipment, etc., can solve the problems of long annealing time, high comprehensive cost, and yield impact, so as to reduce annealing time and improve annealing yield. rate effect

Active Publication Date: 2021-08-27
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the annealing time is relatively long, the yield will be greatly affected, the overall cost is relatively high, and there are still great challenges for large-scale industrial applications.

Method used

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  • A kind of ito annealing process
  • A kind of ito annealing process
  • A kind of ito annealing process

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Embodiment Construction

[0017] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only parts related to the present invention are shown in the drawings but not all content. Before discussing the exemplary embodiments in more detail, it should be mentioned that some exemplary embodiments are described as processes or methods depicted as flowcharts. Although the flowcharts describe various operations (or steps) as sequential processing, many of the operations may be performed in parallel, concurrently, or simultaneously. In addition, the order of operations can be rearranged. The process may be terminated when its operations are complete, but may also have additional steps not included in the figure...

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Abstract

The invention discloses an ITO annealing process. The ITO annealing process includes: S11, fixing the workpiece to be annealed on the carrier, the workpiece to be annealed includes an ITO film, and the ITO film is located on the side of the workpiece to be annealed away from the carrier; S12, The geometric center of the spot formed by the quasi-laser beam on the surface of the ITO film and the geometric center of the first surface, the first surface being the surface of the ITO film away from the stage; S13, adjusting the size of the spot, Make the diameter of the light spot equal to the length of the first line segment, the first line segment is the shortest length among the multiple line segments that pass through the geometric center of the first surface and both ends are located on the edge of the first surface line segment; S14, exposing the position of the light spot on the ITO film for a preset duration. The technical solution provided by the embodiments of the present invention enables the entire area to be annealed of the ITO film to be annealed at the same time, reduces the annealing time of the ITO film, and improves the annealing yield of the ITO film.

Description

technical field [0001] The embodiments of the present invention relate to the field of annealing technology, in particular to an ITO annealing technology. Background technique [0002] Indium tin oxide (Indium Tin Oxides, ITO) is obtained from indium oxide by doping tin. It is an n-type metal compound semiconductor with good transparent conductivity. It has a band gap, high visible light transmittance, low resistivity, and high mechanical hardness. And the advantages of high chemical stability, are widely used in flat panel display, conductive glass, solar cells, transparent electrodes and other fields. [0003] In order to improve the crystalline state of the ITO thin film, reduce lattice defects, and improve the performance of the ITO device, after the ITO thin film is formed, it needs to be annealed. In the prior art, thermal annealing or step-scanning laser annealing is usually used to anneal the ITO film. The thermal annealing process needs to heat the ITO film to be a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/268H01L21/324H01B13/00
CPCH01B13/0016H01B13/003
Inventor 谷全超
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD