Semiconductor device and manufacturing method thereof

Abstract

The invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes a semiconductor device layer, a first electrode interconnection layer, one or morefirst metal columns, a first insulating material and a second electrode interconnection layer, wherein the semiconductor device layer includes one or more semiconductor devices; the first electrode interconnection layer is arranged on the first side of the semiconductor device layer; the one or more first metal columns is / are arranged on the first side of the semiconductor device layer and electrically connected with the first electrode interconnection layer; the first insulating material is arranged around the one or more first metal columns, and the first insulating material is an injectionmolding material; and the second electrode interconnection layer is arranged on a second side opposite to the first side of the semiconductor device layer. In the technical scheme of the invention, good support strength can be realized without a temporary substrate, related processes of a semiconductor manufacturing process are completed, and the semiconductor device is convenient and fast and islow in cost.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Group III nitride semiconductors are important semiconductor materials, mainly including AlN, GaN, InN and compounds of these materials such as AlGaN, InGaN, AlInGaN, etc. Due to the advantages of direct band gap, wide band gap, and high breakdown electric field strength, group III nitride semiconductors represented by GaN have broad application prospects in the fields of light-emitting devices, power electronics, and radio frequency devices. [0003] Unlike traditional non-polar semiconductor materials such as Si, Group III nitride semiconductors are polar, that is, polar semiconductor materials. Polar semiconductors have many unique properties. It is especially important that fixed polarization charges exist on the surface of polar semiconductors or at the interface of two differen...

AI Technical Summary

Problems solved by technology

However, there are many defects in the existing structure, which seriously restricts its application range.

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