Epitaxial structure and manufacturing method thereof

An epitaxial structure and control structure technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems affecting the quantum efficiency, opening position, distribution uniformity and opening size of the light-emitting element, which is not easy to control, and reduces the growth quality of the epitaxial layer, etc. question

Active Publication Date: 2020-11-13
XIAMEN SILAN ADVANCED COMPOUND SEMICON CO LTD
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Problems solved by technology

[0004] However, nitride semiconductor light-emitting elements generally use heteroepitaxy, and the lattice mismatch leads to a large number of dislocations in the light-emitting element, and the dislocation density is as high as 10 8 to 10 10 cm -2 , which reduces the growth quality of the epitaxial layer, thereby reducing the internal quantum efficiency of the light-emitting element
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  • Epitaxial structure and manufacturing method thereof
  • Epitaxial structure and manufacturing method thereof
  • Epitaxial structure and manufacturing method thereof

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Embodiment Construction

[0075] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For simplicity, the epitaxial structure obtained after several steps can be described in one figure.

[0076] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0077] If it is to describe the situation directly on another layer or another area, the ...

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Abstract

The invention discloses an epitaxial structure and a manufacturing method thereof. The epitaxial structure comprises a first carrier supply layer located on a substrate; a regulation and control structure which is located on the first carrier supply layer and comprises a multi-quantum well layer; a plurality of V-shaped recesses which extend into the regulation structure from the surface of the regulation structure; and a second carrier supply layer on the regulation structure. At least two V-shaped recesses are different. According to the epitaxial structure, the extension depth of each V-shaped recess in the regulation and control structure is controlled through the regulation and control structure, the distribution uniformity of the V-shaped recesses in the longitudinal direction of theepitaxial structure is improved, the stress is dispersed, and the uniformity of the mechanical strength of the epitaxial structure is improved, so that the internal quantum efficiency of a light-emitting element is improved.

Description

technical field [0001] The present disclosure relates to the field of epitaxial structure manufacturing, and more particularly, to an epitaxial structure and a manufacturing method thereof. Background technique [0002] Compound semiconductor light-emitting elements have become the mainstream lighting source in the market because of their advantages such as energy saving and environmental protection, high luminous efficiency, easy control of color wavelength, small size, and long service life. They are widely used in home lighting, outdoor street lighting, stage lighting, transportation, etc. Various lighting and display fields such as signal lights, TV backlights, mobile phone computer backlights, indoor display screens, and car lights. [0003] In the prior art, nitride semiconductor light-emitting elements have relatively high luminous efficiency, and thus have been more and more widely used in the lighting field. [0004] However, nitride semiconductor light-emitting el...

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Application Information

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IPC IPC(8): H01L33/06H01L33/24H01L33/14H01L33/32
CPCH01L33/06H01L33/24H01L33/14H01L33/32
Inventor 范伟宏薛脱李东昇邬元杰蒋敏张成军
Owner XIAMEN SILAN ADVANCED COMPOUND SEMICON CO LTD
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