Epitaxial structure and manufacturing method thereof

Abstract

The invention discloses an epitaxial structure and a manufacturing method thereof. The epitaxial structure comprises a first carrier supply layer located on a substrate; a regulation and control structure which is located on the first carrier supply layer and comprises a multi-quantum well layer; a plurality of V-shaped recesses which extend into the regulation structure from the surface of the regulation structure; and a second carrier supply layer on the regulation structure. At least two V-shaped recesses are different. According to the epitaxial structure, the extension depth of each V-shaped recess in the regulation and control structure is controlled through the regulation and control structure, the distribution uniformity of the V-shaped recesses in the longitudinal direction of theepitaxial structure is improved, the stress is dispersed, and the uniformity of the mechanical strength of the epitaxial structure is improved, so that the internal quantum efficiency of a light-emitting element is improved.

Description

technical field [0001] The present disclosure relates to the field of epitaxial structure manufacturing, and more particularly, to an epitaxial structure and a manufacturing method thereof. Background technique [0002] Compound semiconductor light-emitting elements have become the mainstream lighting source in the market because of their advantages such as energy saving and environmental protection, high luminous efficiency, easy control of color wavelength, small size, and long service life. They are widely used in home lighting, outdoor street lighting, stage lighting, transportation, etc. Various lighting and display fields such as signal lights, TV backlights, mobile phone computer backlights, indoor display screens, and car lights. [0003] In the prior art, nitride semiconductor light-emitting elements have relatively high luminous efficiency, and thus have been more and more widely used in the lighting field. [0004] However, nitride semiconductor light-emitting el...

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Problems solved by technology

[0004] However, nitride semiconductor light-emitting elements generally use heteroepitaxy, and the lattice mismatch leads to a large number of dislocations in the light-emitting element, and the dislocation density is as high as 10 8 to 10 10 cm -2 , which reduces the growth quality of the epitaxial layer, thereby reducing the internal quantum efficiency of the light-emitting element

In addition, since V-shaped pits (V-pits) are easily generated during the epitaxial growth process, the opening position, distribution uniformity, and opening size of the V-shaped pits will all affect the internal quantum efficiency of the light-emitting element, and in the prior art , the opening position, distribution uniformity and opening size of the V-shaped depression are not easy to control

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