Light emitting diode
A technology of light-emitting diodes and light-emitting layers, which is applied to semiconductor devices, electrical components, circuits, etc., and can solve problems such as short circuits and penetration into light-emitting diodes
Inactive Publication Date: 2020-11-13
GENESIS PHOTONICS
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- Description
- Claims
- Application Information
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Problems solved by technology
However, during the process of eutectic bonding, the bonding material (for example: solder paste) easily penetrates into the light emitting diode from the interface between the second insulating layer and the first bonding layer and / or the interface between the second insulating layer and the second bonding layer, causing a short circuit
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[0213] Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and descriptions to refer to the same or like parts.
[0214] Figure 1A Shown is a cross-sectional view of a light emitting diode according to an embodiment of the present invention. Please refer to Figure 1A ,in particular, Figure 1A What is shown is a horizontal light emitting diode, and it is a kind of light emitting diode that can be applied to a wire bonding package. The light emitting diode 100 includes a first type semiconductor layer 110 , a light emitting layer 120 , a second type semiconductor layer 130 , a first current conducting layer 140 , a second current conducting layer 150 and a Bragg reflection structure 160 . In this embodiment, one of the first-type semiconductor layer 110 and the second-type semiconductor layer 130 is an ...
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Abstract
A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first connection layerand a second current conducting layer is provided. The emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first connection layer and the first metal layer. The first current conducting layer is connected to the first-type semiconductor layer by the first current conducting layer and the first metal layer. The first connection layer has through holes overlapped with the first metal layer. The second current conducting layer is electrically connected to the second-type semiconductor layer.
Description
[0001] The patent application of the present invention is a divisional application of the patent application for invention named "Light Emitting Diode" with the application date of October 9, 2017 and the application number of 201710930691.9. technical field [0002] The present invention relates to a semiconductor element, and in particular to a light emitting diode. Background technique [0003] In general, light emitting diodes include light emitting diodes applied in vertical packaging and flip chip packaging. A light-emitting diode applied to a flip-chip package includes a first-type semiconductor layer, a light-emitting layer, a second-type semiconductor layer, a first metal layer, a second metal layer, a first insulating layer, a first current conducting layer, and a second current conducting layer. layer, a second insulating layer, a first bonding layer, and a second bonding layer. The first type semiconductor layer has a first part and a second part. The light emi...
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IPC IPC(8): H01L33/10H01L33/62
CPCH01L33/10H01L33/62
Inventor 黄逸儒许圣宗郭佑祯沈志铭庄东霖黄琮训黄敬恩
Owner GENESIS PHOTONICS