Anti-radiation common-island LPNP and SPNP layout structure

Abstract

An anti-radiation common-island LPNP and SPNP layout structure comprises an LPNP base electrode, an LPNP collector electrode, an LPNP emitter electrode, an SPNP emitter electrode, a base region composite wall, a substrate, an epitaxial layer channel resistor and a buried layer. The surface of the substrate is covered with an epitaxial layer, and a buried layer is arranged between the epitaxial layer and the substrate; the LPNP base electrode, the LPNP collector electrode, the LPNP emitter electrode, the base region composite wall and the SPNP emitter electrode are arranged on the epitaxial layer; the LPNP and the SPNP which share the same island are separated by the base region composite wall to form an LPNP isolation island and an SPNP isolation island, and the LPNP isolation island and the SPNP isolation island are communicated through an epitaxial layer to form an epitaxial layer channel resistor; the base electrode B of the LPNP is connected with one end of the epitaxial channel resistor through the epitaxial layer, and the other end of the epitaxial channel resistor is connected with the base electrode of the SPNP. The current amplification factor of the SPNP is effectively improved, the anti-irradiation performance is improved, and the layout area is saved. The layout structure can be popularized and applied to layout design of any low-voltage anti-radiation bipolar circuit, the layout area of a chip is effectively reduced, and the anti-radiation performance is improved.

Description

technical field [0001] The invention relates to the technical field of integrated circuit bipolar circuit layout design, in particular to an anti-radiation common-island LPNP and SPNP layout structure. Background technique [0002] At present, bipolar circuits such as radiation-resistant precision operational amplifiers are widely used in aerospace, aviation and other fields. The miniaturization of circuit chips, the improvement of radiation resistance performance and work reliability are the necessary prerequisites to ensure the smooth completion of model tasks. The current application environment of precision operational amplifiers is becoming more and more complex, and the performance requirements for amplifiers are becoming more and more stringent. This requires the chip to meet the challenges of harsh application conditions on the premise of meeting the basic performance requirements, and often the conventional design structure is not enough to meet the requirements. ...

AI Technical Summary

Problems solved by technology

However, the conventional anti-radiation common base LPNP and SPNP layout structures have the following disadvantages: 1) The base diffusion area as the collector area of ​​the SPNP tube does not completely surround the emitter area, which reduces the current collection ability of the emitter area and the magnification of the SPNP tube. , under the radiation environment, the further decrease of the magnification will affect the overall anti-radiation performance of the circuit; 2) There is a current channel between the SPNP emitter and the LPNP collector, such as figure 2 As shown in area A in the middle, when there is a defect on the surface of the device or the inversion of area A after radiation, it will cause a leakage channel between the SPNP and LPNP tubes, which will affect the normal use of the entire chip

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