High voltage ESD structure

Abstract

The invention discloses a high-voltage ESD structure which is an MOS tube structure with a rounded rectangle-shaped planar layout. The high-voltage ESD structure comprises a drain region, wherein thedrain region is positioned in a central region of the rounded rectangle; the rounded rectangle is divided into top rounded corners and bottom rounded corners on an overlooking plane; a heavily-doped N-type region and a heavily-doped P-type region are arranged in the arc-shaped region of each top round corner, are parallel to each other and are in abutting contact with each other; the drain regionis divided into a top drain region and a bottom drain region, the top drain region comprises a contact region, and the boundary of an active region is located outside the contact region and spaced from the contact region by a certain distance; the bottom drain region comprises a heavily doped N-type injection region, and the width of the heavily doped N-type injection region is smaller than that of the active region; contact holes are not formed in the drain region at the bottommost end, and the drain region close to the central region has two columns of contact holes; and in the bottom roundcorner region, the heavily doped N-type region abuts against and contacts with the heavily doped P-type region, and the heavily doped N-type region overlaps with the boundary of the active region. Thehigh-voltage ESD structure can improve the ESD capability.

Description

technical field [0001] The invention relates to the field of design and manufacture of semiconductor devices, in particular to a high-voltage ESD structure. Background technique [0002] Static electricity is an objective natural phenomenon, which can be produced in many ways, such as contact, friction, induction between electrical appliances, etc. Static electricity is characterized by long-term accumulation, high voltage, low power, small current and short action time. Static electricity causes serious harm in many fields. Friction electrification and human body static electricity are two major hazards in the electronics industry, which often cause unstable operation or even damage of electronic and electrical products. [0003] As the feature size of the semiconductor integrated circuit manufacturing process becomes smaller and smaller, the size of the chip unit is also smaller and smaller, and the antistatic ability of the chip becomes more and more important. The des...

AI Technical Summary

Problems solved by technology

The drain region is located in the central area of ​​the layout, and the anti-ESD ability of the device with this structure is relatively weak, only 500V, which cannot meet some applications with higher ESD requirements

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