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Film piezoelectric acoustic wave filter and manufacturing method thereof

A piezoelectric sound wave and filter technology, applied in the direction of electrical components, impedance networks, etc., can solve problems such as low reliability and poor cover stability, and achieve the effects of reduced structural strength, reduced volume, and reduced leakage loss

Active Publication Date: 2020-12-04
NINGBO SEMICON INT CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The technical problem to be solved by the present invention is: the packaging process reliability of the upper cavity formed by the thin-film piezoelectric acoustic wave filter in the prior art is low, and the stability of the cover above the cavity is relatively poor

Method used

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  • Film piezoelectric acoustic wave filter and manufacturing method thereof
  • Film piezoelectric acoustic wave filter and manufacturing method thereof
  • Film piezoelectric acoustic wave filter and manufacturing method thereof

Examples

Experimental program
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Embodiment 1

[0042] An embodiment of the present invention provides a thin-film piezoelectric acoustic wave filter, figure 1 It is a structural schematic diagram of a thin-film piezoelectric acoustic wave filter according to an embodiment of the present invention, in which only two acoustic wave resonator units are shown in the figure, specifically the number of acoustic wave resonator units in each filter and the electrical connections between them The method is specifically set according to the requirements of the filter itself.

[0043] Please refer to figure 1 , the thin-film piezoelectric acoustic wave filter includes:

[0044] First substrate; a plurality of acoustic wave resonator units 200 placed on the first substrate; the acoustic wave resonator unit 200 is the smallest resonance unit, and each acoustic wave resonator unit 200 includes a piezoelectric induction sheet 21 for A first electrode and a second electrode opposite to each other that apply a voltage to the piezoelectric...

Embodiment 2

[0064] refer to figure 2 , figure 2 Take the connection of the piezoelectric induction plates 21 of two adjacent piezoelectric resonators as an example.

[0065] In Embodiment 2, the piezoelectric induction plates 21 of at least some of the adjacent acoustic wave resonator units 200 in the filter are connected together, and the projection of the first cavity 23 on the acoustic wave resonator unit 200 Part of the boundary encloses the boundary of the effective area of ​​the connected piezoelectric induction plates 21 . When the piezoelectric induction sheets 21 of a plurality of acoustic wave resonator units are connected together, the upper electrode 22 and the lower electrode 20 of each acoustic wave resonator unit form an effective working area in the overlapping area perpendicular to the direction of the piezoelectric induction sheet 21. Area. The isolation part 40 between the adjacent first cavities 23 makes the acoustic impedance mismatch between the effective workin...

Embodiment 3

[0067] see image 3 , in this embodiment, the piezoelectric induction plates 21 of all the acoustic wave resonator units 200 in the filter are connected together, and the boundary area of ​​the projection of the first cavity 23 on the acoustic wave resonator unit 200 becomes the boundary of the effective working area of ​​the acoustic wave resonator unit 200. The isolation portion 40 between the adjacent first cavities 23 makes the acoustic impedance mismatch between the effective working area and the invalid working area, so as to solve the shear wave leakage caused by the connection of the piezoelectric induction plates 21 together. In this way, the piezoelectric layer does not need to be patterned to form the piezoelectric induction sheet of each acoustic wave resonator unit, which simplifies the process. It should be understood that when the overall boundary of the first cavity coincides with the overall boundary of the effective working area, the size of the first cavity...

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Abstract

The invention discloses a film piezoelectric acoustic wave filter and a manufacturing method thereof. The film piezoelectric acoustic wave filter comprises a first substrate; a plurality of acoustic resonator units disposed on the first substrate, wherein each acoustic resonator unit comprises a piezoelectric induction sheet body, and a first electrode and a second electrode which are used for applying voltage to the piezoelectric induction sheet body and are opposite to each other; a cover cap layer located on the first substrate, wherein the cover cap layer is provided with a plurality of sub cover caps, the sub cover caps surround the acoustic wave resonator units to form first cavities between the acoustic wave resonator units and the sub cover caps, and isolation parts are arranged between the adjacent sub cover caps to isolate the adjacent first cavities. According to the invention, the independent first cavities are formed above the acoustic resonator units, and compared with amode that a plurality of acoustic resonator units share one large cavity, the volume of the first cavities is greatly reduced, the structural strength required by the cover cap layer is reduced, and the problem of collapse of the cover cap layer caused by large cavities can be prevented.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a thin-film piezoelectric acoustic wave filter and a manufacturing method thereof. Background technique [0002] With the development of wireless communication technology, traditional single-band single-standard equipment can no longer meet the diverse requirements of communication systems. At present, the communication system tends to be more and more multi-band, which requires the communication terminal to be able to accept each frequency band to meet the requirements of different communication service providers and different regions. [0003] RF (radio frequency) filters are generally used to pass or block specific frequencies or frequency bands in RF signals. In order to meet the development needs of wireless communication technology, the RF filter used in the communication terminal is required to meet the requirements of multi-band and multi-standard commun...

Claims

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Application Information

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IPC IPC(8): H03H9/54H03H3/02
CPCH03H9/54H03H3/02
Inventor 黄河罗海龙李伟
Owner NINGBO SEMICON INT CORP
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