Bonding disc for wafer bonding and wafer bonding device

Abstract

The invention discloses a bonding disc for wafer bonding and a wafer bonding device, and belongs to the field of semiconductor wafer processing. The bonding disc for wafer bonding sequentially comprises pressing discs, a graphite layer, a heating disc, a cooling disc and a heat insulation layer from the inner side to the outer side, the heat insulation layer comprises a reflection screen and a base plate, the base plate is arranged on the outer side of the reflection screen, and a cooling medium circulation channel is arranged in the base plate. Heat of the heating disc can be uniformly conducted to the pressing discs through the graphite layer, and the parallelism error of the upper pressing disc and the lower pressing disc can be compensated. The heat insulation layer comprising the reflecting screen and the base plate well prevents heat of the heating disc from being conducted to components such as a connecting piece, the heat insulation effect is good, the heating efficiency of theheating disc is high, and the influence of the cooling effect of the base plate on heating of the heating disc is small. And moreover, the structure is simple.

Description

technical field [0001] The present invention relates to the field of semiconductor wafer processing, in particular to a bonding pad for wafer bonding and a wafer bonding device. Background technique [0002] As the application fields of wafer bonding technology become more and more extensive, temperature has gradually become one of the bottlenecks in the development of wafer bonding technology. Wafer bonding processes include fusion, anodic bonding, metal bonding, and polymer adhesive bonding. In these wafer bonding methods, two wafers need to be heated to fuse or diffuse the dielectric layers on the surface of the wafers. , and complete the pressing of two wafers together. [0003] A bonding plate for wafer bonding in the prior art is composed of a heating plate, a cooling plate and a pressure plate. The wafer bonding device uses two sets of upper and lower bonding plates, and the upper and lower bonding plates are arranged symmetrically. The following bonding plate is t...

AI Technical Summary

Problems solved by technology

[0004] During the heating process of the bonded disk in the prior art, it is easy to conduct the temperature of the heating disk to the connecting part of the heating disk and the vacuum chamber

When the temperature of the heating plate reaches the bonding temperature of 550°C, the temperature transmitted to the vacuum chamber will be very high, which will directly damage components such as vacuum components and seals, and there will be a risk of burns when personnel touch the high-temperature vacuum chamber

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