Device structure for improving EMC performance of superconducting quantum device and preparation method
A technology for superconducting quantum interference and devices, which is applied in the field of device structure and preparation for improving the EMC performance of superconducting quantum devices, can solve problems such as difficulty in improvement, and achieve the effects of improving EMC performance, avoiding mutual crosstalk and improving anti-interference ability.
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[0042] Based on the above, as Figure 1 to Figure 5 As shown, the present embodiment provides a preparation method of a superconducting quantum interference device, the preparation method comprising:
[0043] Such as figure 1 As shown, step 1) S11 is first performed to provide a substrate; on the substrate, a first metal layer is deposited on the front or back of the substrate.
[0044] In one embodiment, the first metal layer is deposited on the front side of the substrate, such as Figure 2 ~ Figure 3 shown.
[0045] In yet another embodiment, the first metal layer is deposited on the backside of the substrate, such as Figure 4 ~ Figure 5 shown.
[0046] For example, the substrate can be Si / SiO 2 substrate, MgO substrate and Al 2 o 3 any of the substrates.
[0047] The first metal layer adopts a non-superconducting thin film layer, and the non-superconducting thin film layer not only shields the environmental electromagnetic field signal, but also quickly consumes t...
Embodiment 2
[0076] Such as Figure 6 ~ Figure 7 As shown, this embodiment provides a method for preparing a superconducting quantum interference device, the basic steps of which are as in embodiment 1, wherein the difference from embodiment 1 is that step 2) also includes: etching the first The insulating layer forms a first groove, and the first groove is used for the subsequent preparation of the metal shielding shell; step 3) also includes: preparing and forming a second groove on the second insulating layer, and the second groove and The position of the first insulating layer groove is aligned for the subsequent preparation of the metal shielding shell; step 5) also includes: forming a third groove on the third insulating layer, and the third groove is at the same position as the second groove Alignment, for the subsequent preparation of the metal shielding shell; step 7) also includes: forming a fourth groove on the fourth insulating layer, the fourth groove is aligned with the third...
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