Spin polarization-coupled GaN MOSFET and preparation method thereof

Abstract

The invention discloses a spin polarization-coupled GaN MOSFET and a preparation method, belonging to the field of ferromagnetic materials and the field of third-generation semiconductor microwave millimeter wave devices. Thespin polarization-coupled GaN MOSFETstructurally comprises a GaN MOSFET complete epitaxial structure, and source and drain metal, a source and drain protection SiN medium, a primary gate metal magnetized film and secondary gate metal which are prepared on the GaN MOSFET complete epitaxial structure. A magnetized film is prepared on the surface of a barrier layer of the GaNMOSFET complete epitaxial structure to form the primary gate metal magnetization film, and then the secondary gate metal is prepared so as to form a complete gate. According to the invention, the electron spinning direction of two-dimensional electron gas in a trench can be modulated according to the magnetism and the magnetization direction of the gate; and meanwhile, the concentration of the two-dimensional electron gas in the trench can be regulated and controlled.

Description

technical field [0001] The invention relates to a spin-polarized coupled GaN MOSFET (Metal-Oxide Semiconductor Field Effect Transistor: Metal-Oxide Semiconductor Field Effect Transistor, MOSFET) and a preparation method thereof, belonging to the field of ferromagnetic materials and the field of third-generation semiconductor microwave millimeter wave devices . Background technique [0002] The third-generation semiconductor GaN device has a larger band gap and a higher operating voltage, and it has broad application prospects in the field of microwave and millimeter wave chips. Generally, MOSFET devices with AlGaN / GaN structure adopt MOCVD (metal organic chemical vapor deposition), MBE (molecular beam epitaxy) and other methods to achieve epitaxial growth. Due to the inverse piezoelectric effect of the AlGaN / GaN interface, there is a two-dimensional electron gas in the GaN channel, so the field-effect characteristic barrier formed by the gate of the device can control the t...

AI Technical Summary

Problems solved by technology

In principle, the spin polarization coupling between the gate and the channel electrons is not realized, that is, the gate cannot simultaneously regulate the spin direction and channel current of the spin electrons in the channel.

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