Terminal structures of semiconductor devices and insulated gate bipolar transistors

Abstract

The invention discloses a terminal structure of a semiconductor device and an insulated gate bipolar transistor. The terminal structure of the semiconductor device includes: a main junction, a field limiting ring and a stop ring; the field limiting ring is located between the main junction and the stopping ring; a drift layer, the main junction, the field limiting ring sharing the drift layer with the stop ring; wherein the main junction includes a first diffusion region and a second diffusion region located at the top of the drift layer, and the first diffusion region is located away from the second diffusion region One end of the field limiting ring, and the depth of the first diffusion region is smaller than the depth of the second diffusion region; the main junction also includes at least one first trench, the first trench is located in the first In the diffusion region; the first trench is used to drive part of the current path in the main junction to flow vertically. The invention can ensure the reliability of the terminal structure of the device while increasing the breakdown voltage of the device.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductor devices, in particular to a terminal structure of a semiconductor device and an insulated gate bipolar transistor. Background technique [0002] In semiconductor devices, the ideal device breakdown voltage refers to the case where the PN junction is a parallel planar junction. However, due to the influence of device structure, material and production process, the junction surface of the actually formed PN junction is not a real plane, and the metallurgical junction surface at the edge of the diffusion region is similar to a cylindrical surface or a spherical surface. The junction curvature effect causes the electric field on the surface of the device to be greater than that in the body, and the withstand voltage of the device is determined by the surface breakdown, which will lead to a decrease in the breakdown voltage. In addition, if the device is cut through the PN ...

AI Technical Summary

Problems solved by technology

However, the existing terminal structures all have one or more of the problems of increased reverse leakage current and junction capacitance, sensitivity to interface charges, limited range of boosting withstand voltage, or easy breakdown in advance.

Therefore, the terminal structure of the existing semiconductor device cannot ensure the reliability of the terminal structure of the device while increasing the breakdown voltage of the device

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