Voltage frequency converter circuit, method and chip based on unipolar transistor

Abstract

The invention discloses a voltage frequency converter circuit based on a unipolar transistor, a method and a chip, the voltage frequency converter circuit comprises an integrator, the integrator comprises an amplifier, a resistor and a capacitor, one end of the capacitor is connected to the inverting input end of the amplifier, and the other end of the capacitor is connected to the output end of the amplifier; one end of the resistor is connected with the inverting input end of the amplifier; the output end of the amplifier is connected with the input end of the Schmitt trigger; the output endof the Schmitt trigger is connected with the control end of the electronic switch, the first end of the electronic switch is connected with one end of the capacitor, and the second end of the electronic switch is connected with the other end of the capacitor. The integrator is started and reset periodically through the digital output of the Schmitt trigger, so that oscillation is generated, the oscillation frequency is highly linearly related to the input voltage, the resolution is greatly improved, and the oscillator can be widely applied to the field of semiconductor integrated circuits.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to a voltage-frequency converter circuit, method and chip based on unipolar transistors. Background technique [0002] Compared with conventional silicon complementary oxide semiconductor (CMOS) technology, thin-film transistor technology has attractive properties, including flexibility, transparency, light weight, ultra-thin size, stretchability, and the ability to manufacture large areas at low cost . Owing to these advantages, they are promising in wearable sensor applications. Despite the many advantages of thin-film technology, the lack of high-performance complementary devices poses a challenge to circuit design in most cases. For example, in a-Si TFT technology, the main device type of oxide TFT technology is n-type transistor; while in organic TFT technology, the main device type of carbon nanotube technology is p-type transistor. Therefore, under normal c...

AI Technical Summary

Problems solved by technology

At present, several commonly used structures of voltage-frequency converters based on unipolar thin film transistors and their disadvantages are briefly described as follows: 1. Using the back gate of the device to adjust the oscillation frequency, this method will increase the complexity of the circuit manufacturing process, and is different from Commercial single-gate technology is not compatible; 2. The voltage-controlled ring oscillator structure is adopted. The disadvantage of this structure is high power consumption, because the power supply voltage is directly controlled by the input signal; 3. The relaxation oscillator structure is adopted, but its topology is more complicated (requires an external clock control signal), and the linearity is poor; 4. The structure of LC based on active inductance is adopted, but its output frequency range is very low, which limits its application range

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