Method for preparing TiN thick film based on inner surface of GT35 spherical bowl part

Abstract

The invention discloses a method for preparing a TiN thick film based on the inner surface of a GT35 spherical bowl part. According to the method, the part is placed in a vacuum furnace, vacuumized and heated, then argon is introduced into the vacuum furnace for argon ion etching on the inner surface of a spherical bowl, and a titanium target is started to plate a priming coat on the inner surfaceof the etched spherical bowl after argon ion etching is completed; after the priming coat completely covers the inner surface of the spherical bowl part, the titanium target continues to work, and unsaturated nitrogen starts to be introduced to deposit a transition layer, wherein the nitrogen introduction amount is increased step by step along with the deposition time, the titanium and titanium nitride coexistent transition layer is formed, and the deposition time is prolonged along with the increase of the nitrogen introduction amount; and when the thickness of the transition layer is greater than or equal to 10 microns, saturated nitrogen starts to be introduced continuously to form a titanium nitride layer through deposition, and cooling and discharging can be performed after the thickness of the titanium nitride layer is greater than or equal to 6 microns.

Description

technical field [0001] The invention relates to a physical vapor deposition process, in particular to a process method for preparing a TiN thick film on the inner surface of a GT35 ball bowl part. Background technique [0002] In the PVD industry, due to the influence of the columnar crystal structure, the internal stress of the TiN film layer is too large. Once defects such as film cracking, peeling, and peeling occur, the film layer fails. The thickness of the TiN film layer deposited by conventional methods Generally, they are all below 5 μm, and it is difficult to meet the film thickness requirement of more than 15 μm required by the ball bowl. Contents of the invention [0003] In order to solve the deficiencies in the prior art, a titanium nitride coating method with a film thickness of more than 15 microns and good bonding force, which is not easy to crack, fall off, and peel is provided: [0004] A method for preparing a TiN thick film on the inner surface of a GT...

AI Technical Summary

Problems solved by technology

[0002] In the PVD industry, due to the influence of the columnar crystal structure, the internal stress of the TiN film layer is too large. Once defects such as film cracking, peeling, and peeling occur, the film layer fails. The thickness of the TiN film layer deposited by conventional methods Generally, they are all below 5 μm, and it is difficult to meet the film thickness requirement of more than 15 μm required by the ball bowl