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Overcurrent protection circuit based on MOS internal resistance RDS and electronic device detection equipment

An overcurrent protection circuit and MOS tube technology, applied in emergency protection circuit devices for limiting overcurrent/overvoltage, emergency protection circuit devices, electrical components, etc. Power supply and other issues, to achieve the effect of less devices used overall, small overall size, and extremely high power consumption

Pending Publication Date: 2020-12-29
深圳市微特精密科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to prevent excessive current from being provided to the electronic device testing equipment, the electronic device testing equipment is equipped with an overcurrent protection circuit. There are many devices used, the overall volume is large, and in order to obtain a sufficiently large sampling signal, it often requires a large amount of power consumption, increasing power consumption and causing heat problems

Method used

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  • Overcurrent protection circuit based on MOS internal resistance RDS and electronic device detection equipment
  • Overcurrent protection circuit based on MOS internal resistance RDS and electronic device detection equipment
  • Overcurrent protection circuit based on MOS internal resistance RDS and electronic device detection equipment

Examples

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Effect test

Embodiment 1

[0016] Example 1, such as Figure 1-2 As shown, an overcurrent protection circuit B1 based on the MOS internal resistance RDS includes a MOS transistor Q1, an instrumentation amplifier U1, and a switch circuit B2. The source of the MOS transistor Q1 is connected to the positive input terminal of the instrumentation amplifier U1 and the first A power supply terminal V1 is electrically connected, and the drain of the MOS transistor Q1 is electrically connected to the negative input terminal of the instrument amplifier U1 and the current output terminal VOUT. The switch circuit B2 includes a first switch input terminal B21, a second switch input terminal B22, and a switch output terminal. Terminal B23, the first switch input terminal B21 is electrically connected to the second power supply terminal V2 of the power supply, the second switch input terminal B22 is electrically connected to the output terminal of the instrumentation amplifier U1, and the switch output terminal B23 is ...

Embodiment 2

[0021] Example 2, such as image 3 As shown, an electronic device detection device includes a power supply, a load circuit B3, an overcurrent protection circuit B1 based on the internal resistance RDS of the MOS tube in Embodiment 1, and the current output terminal VOUT of the overcurrent protection circuit B1 is connected to the load circuit B3 The input terminals are electrically connected.

[0022] working principle:

[0023] The voltage difference is generated by the internal resistance RDS between the source and the drain of the MOS transistor Q1, and the generated voltage difference is amplified by the instrumentation amplifier U1 and then sent to the second switch input terminal B22 of the switch circuit B2; resistor R1 and resistor R2 The power supply voltage is divided, and the reference voltage Vref between the resistor R1 and the resistor R2 is used as a comparison value. When the voltage value sent to the second switch input terminal B22 is higher than or equal to...

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Abstract

The invention relates to the technical field of overcurrent protection circuits, in particular to an overcurrent protection circuit based on MOS internal resistance RDS and electronic device detectionequipment, the overcurrent protection circuit comprises an MOS Q1, an instrument amplifier U1 and a switching circuit B2, and the source electrode of the MOS Q1 is electrically connected with the forward input end of the instrument amplifier U1 and the first power supply end V1 of a power supply; the drain electrode of the MOS Q1 is electrically connected with the negative input end and the current output end VOUT of the instrument amplifier U1, the switching circuit B2 comprises a first switching input end B21, a second switching input end B22 and a switching output end B23, the first switching input end B21 is electrically connected with a second power supply end V2 of the power supply, and the second switching input end B22 is electrically connected with the output end of the instrument amplifier U1. The switch output end B23 is electrically connected with the grid electrode of the MOS Q1; the overcurrent protection circuit is extremely low in power consumption, does not generate alarge amount of heat, and is simple in overall circuit structure, small in overall size and high in practicability, and the number of overall used devices is small.

Description

Technical field: [0001] The invention relates to the technical field of overcurrent protection circuits, in particular to an overcurrent protection circuit and electronic device detection equipment based on the internal resistance RDS of a MOS tube. Background technique: [0002] The circuit modules of electronic products include a circuit board and a large number of electronic devices plugged into the circuit board. During the production process, if a bad electronic device is plugged into the circuit board, it may cause the function or performance of the entire circuit board to fail. question. At this time, it takes a lot of time to repair, and the repair is also more difficult, making the repair cost higher. Therefore, it is necessary to detect each electronic device before the electronic device is used, and to detect the bad electronic device can reduce the problem of repairing after the bad electronic device is inserted into the circuit board. With the development of a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02H9/02
CPCH02H9/025
Inventor 陈启恩
Owner 深圳市微特精密科技股份有限公司