Overcurrent protection circuit based on MOS internal resistance RDS and electronic device detection equipment
An overcurrent protection circuit and MOS tube technology, applied in emergency protection circuit devices for limiting overcurrent/overvoltage, emergency protection circuit devices, electrical components, etc. Power supply and other issues, to achieve the effect of less devices used overall, small overall size, and extremely high power consumption
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0016] Example 1, such as Figure 1-2 As shown, an overcurrent protection circuit B1 based on the MOS internal resistance RDS includes a MOS transistor Q1, an instrumentation amplifier U1, and a switch circuit B2. The source of the MOS transistor Q1 is connected to the positive input terminal of the instrumentation amplifier U1 and the first A power supply terminal V1 is electrically connected, and the drain of the MOS transistor Q1 is electrically connected to the negative input terminal of the instrument amplifier U1 and the current output terminal VOUT. The switch circuit B2 includes a first switch input terminal B21, a second switch input terminal B22, and a switch output terminal. Terminal B23, the first switch input terminal B21 is electrically connected to the second power supply terminal V2 of the power supply, the second switch input terminal B22 is electrically connected to the output terminal of the instrumentation amplifier U1, and the switch output terminal B23 is ...
Embodiment 2
[0021] Example 2, such as image 3 As shown, an electronic device detection device includes a power supply, a load circuit B3, an overcurrent protection circuit B1 based on the internal resistance RDS of the MOS tube in Embodiment 1, and the current output terminal VOUT of the overcurrent protection circuit B1 is connected to the load circuit B3 The input terminals are electrically connected.
[0022] working principle:
[0023] The voltage difference is generated by the internal resistance RDS between the source and the drain of the MOS transistor Q1, and the generated voltage difference is amplified by the instrumentation amplifier U1 and then sent to the second switch input terminal B22 of the switch circuit B2; resistor R1 and resistor R2 The power supply voltage is divided, and the reference voltage Vref between the resistor R1 and the resistor R2 is used as a comparison value. When the voltage value sent to the second switch input terminal B22 is higher than or equal to...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 


