Composition for etching silicon nitride film and etching method using same
A composition, silicon nitride technology, applied in surface etching compositions, chemical instruments and methods, electrical components, etc., can solve the problems of silicon oxide layer etching, silicon nitride layer etching, etc.
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example 1
[0064] An etching composition for silicon nitride containing 85% by weight of phosphoric acid, 0.5% by weight of silane compound 1, and the balance of water was prepared.
example 2 to example 11 and comparative example 1 to comparative example 4
[0066] Each of the etching compositions for silicon nitride was prepared in the same manner as in Example 1, except that a different compound was used in the amount listed in Table 1 instead of silane compound 1 .
[0067] Evaluation Example 1
[0068] Each of the etching compositions for silicon nitride prepared in Examples 1 to 11 and Comparative Examples 1 to 4 was heated to 160° C., and then the LP-SiN layer or PE-SiO layer for 5 minutes. The thickness of the LP-SiN layer or the PE-SiO layer was measured using an ellipsometer before and after etching, and then the etching selectivity of the silicon nitride layer compared to the silicon oxide layer was calculated, and the results are shown in Table 1 middle.
example 2
[0070] Each of the etching compositions for silicon nitride prepared in Examples 1 to 11 and Comparative Examples 1 to 4 was heated to 160° C., and then the LP-SiN layer or PE-SiO layer for 5 minutes. After etching, the composition was placed in a vial, and then the transmittance at 880 nm was measured using Terbiscan to confirm the presence of precipitates in the composition, and the results are shown in Table 1.
[0071] [Table 1]
[0072]
[0073]
[0074] As can be seen from Table 1, compared with the etching composition of Comparative Example 1 to Comparative Example 4, the etching composition for silicon nitride prepared in Examples 1 to 11 has a higher effect on silicon nitride than the silicon oxide layer. layer with higher etch selectivity.
[0075] In addition, it can be seen that the etching composition for silicon nitride does not cause abnormal growth of silicon oxide and generation of deposits.
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