A traveling wave magnetic field control method suitable for crystal growth process
A traveling wave magnetic field and crystal growth technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of not changing high-quality crystals, achieve optimized temperature distribution, wide modulation range, and improve crystal quality Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0022] The present embodiment is to control the crystallization interface shape of different longcrystalline stages by adjusting the traveling wave magnetic field parameters.
[0023] See Figure 1 The traveling-wave magnetic field is generated by six sets of coils with sinusoidal alternating current. Figure 2 The Lorentz force distribution in the conductive melt at different stages of crystal growth process is given, at this time, the inner diameter of the six sets of coils generating the traveling wave magnetic field is 230mm, the outer diameter is 330mm, the coil height is 40mm, the number of turns of each set of coils is 38 turns, the inflow current of each turn is 5A frequency 50Hz, the phase difference between adjacent coils is 60°, the spacing is 100mm, and the diameter and height of the silicon melt are 100mm when the full melt state is 100mm. Figure 3 The deformation of the median ordinate interface is defined as the difference between the interface position at the centra...
Embodiment 2
[0025] The present embodiment is to control the concentration and distribution of oxygen impurities by adjusting the traveling wave magnetic field parameters of different longcrystalline stages.
[0026] See Figure 4 The distribution of oxygen impurities in the silicon crystal when the 5A current is passed into the coil, the direction of the traveling wave magnetic field is downward, and the magnetic field frequency is 0, 50, 150, and 500Hz, respectively. It can be found that with the increase of frequency, the concentration of oxygen impurities in the lower part of the crystal first increases and then decreases, while the concentration of oxygen impurities in the upper part of the crystal is not much different. Therefore, in order to reduce the content of oxygen impurities in the crystal and so that the oxygen impurities are evenly distributed in the crystal, a larger frequency (e.g., 500Hz) may be used in the early stage of the longcrystalline, a frequency may be reduced in the ...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 


