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High-hydrophobicity ultrathin wafer cleaning method

A technology with high hydrophobicity and hydrophobicity, applied in cleaning methods and utensils, cleaning methods using liquids, chemical instruments and methods, etc., can solve problems such as water marks caused by cleaning and drying the surface of ultra-thin wafers

Pending Publication Date: 2021-01-22
绍兴同芯成集成电路有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the deficiencies in the prior art, the purpose of the present disclosure is to provide a method for cleaning ultra-thin wafers with high hydrophobicity, which solves the problem of water marks caused by cleaning and drying the surface of ultra-thin wafers in the prior art

Method used

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  • High-hydrophobicity ultrathin wafer cleaning method

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Embodiment Construction

[0021] The following will clearly and completely describe the technical solutions in the embodiments of the present disclosure with reference to the accompanying drawings in the embodiments of the present disclosure. Apparently, the described embodiments are only some of the embodiments of the present disclosure, not all of them. Based on the embodiments in the present disclosure, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present disclosure.

[0022] Such as figure 1 Shown, a kind of highly hydrophobic ultra-thin wafer cleaning method comprises the following steps:

[0023] S1: The ultra-thin wafer is fixed in the jig in a vertical manner, the jig is placed in the cleaning tank for positioning, and the upper cover of the cavity is sealed;

[0024] S2: use deionized water to overflow in the cleaning tank;

[0025] S3: Use high-circumstance ozone to act on the surface of the wafer to ...

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Abstract

The invention discloses a high-hydrophobicity ultrathin wafer cleaning method, belonging to the technical field of wafer production. The method comprises the following steps: S1, fixing an ultrathin wafer in a jig in a heavy straight manner, placing the jig in a cleaning tank for positioning, and sealing an upper cover of a cavity; S2, subjecting deionized water to overflowing in the cleaning tank; S3, applying high-circularity ozone to the surface of the wafer to remove impurity organic matters and metal pollution; S4, forming an oxide layer on the surface of the wafer so as to convert a hydrophobic ultrathin wafer surface into a hydrophilic ultrathin wafer surface; S5, slowly discharging deionized water in the cleaning tank; S6, sealing the upper cover of the water tank, quickly pumpingout gas in the water tank by using a sucking pump to form a vacuum state, and drying and gasifying water drops on the surface of the ultrathin wafer to form a hydrophobic surface; and S7, taking the cleaned and dried ultrathin wafer out of the cleaning tank together with the jig. According to the scheme, the problem that water marks are generated when the surface of the ultrathin wafer is cleanedand dried in the prior art is solved.

Description

technical field [0001] The present disclosure relates to the technical field of wafer production, and more specifically, relates to a cleaning method for highly hydrophobic ultra-thin wafers. Background technique [0002] The Si or poly Si of Heavy doped is a hydrophobic Surface (hydrophobic surface). When cleaning and drying the final surface of the cleaning or polishing or removal (etching) process, mechanical or heating methods are generally used; CMP process or back grinding, The etching process generally uses scrubbing (Scrubber clean) or cleaning with NH4OH / H2O2 (SC-1), but it is still unavoidable that heavy doped Si or poly silicon will produce a large number of Water Mark (water mark) defects. If Marogoni or IPADry is used on ultra-thin wafers, the water film needs to be separated slowly due to the surface tension. The warpage problem of ultra-thin wafers will form a major obstacle. [0003] Ultra-thin wafer cleaning and drying limitations. Coupled with the cleani...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/67B08B3/04
CPCH01L21/02057H01L21/67028H01L21/67057H01L21/67034B08B3/048
Inventor 严立巍文锺符德荣
Owner 绍兴同芯成集成电路有限公司