Intracavity wafer centering system and working method thereof

A wafer-centering technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of poor etching repeatability in the edge area of ​​the wafer

Pending Publication Date: 2021-01-22
上海谙邦半导体设备有限公司 +1
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the existing edge etching process using an edge etching device, the etching repeatability of the edge area of ​​the wafer is poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Intracavity wafer centering system and working method thereof
  • Intracavity wafer centering system and working method thereof
  • Intracavity wafer centering system and working method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] An embodiment of the present invention provides an intracavity wafer centering system, please refer to figure 1 ,include:

[0031] body cavity 100;

[0032] A wafer support platform 110 located in the main cavity 100, the surface of the wafer support platform 110 is suitable for placing a wafer 10;

[0033] A plurality of displacement holes located at the side of the wafer support platform 110 and passing through the bottom wall of the main chamber 100;

[0034] The thimbles 170 respectively located in the displacement holes, the thimbles 170 include a thimble body 170a and a limiting part 170b;

[0035] The thimble position adjusting member 150 located at the bottom of the main cavity 100 is suitable for controlling the distance between the thimble 170 and the central axis of the wafer support platform 110 , and the thimble position adjusting member 150 It is also suitable for controlling the longitudinal reciprocating movement of the thimble 170 in the displacement...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an intracavity wafer centering system and a working method thereof. The intracavity wafer centering system comprises a main body cavity; a wafer supporting platform which is positioned in the main body cavity; a plurality of displacement holes being formed in the side part of the wafer supporting platform and penetrating through the bottom wall of the main body cavity; ejector pins which are respectively positioned in the displacement holes, wherein each ejector pin comprises an ejector pin body and a limiting part; and an ejector pin position adjusting piece which is positioned at the bottom of the main body cavity, is suitable for controlling the distance between the ejector pins and the central shaft of the wafer supporting platform, and is also suitable for controlling the ejector pins to reciprocate in the displacement holes along the longitudinal direction. According to the intracavity wafer centering system, the position of the wafer in the main body cavity can be accurately positioned, and the process repeatability is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an intracavity wafer centering system and a working method thereof. Background technique [0002] In semiconductor manufacturing, multiple processes are involved, and each process is completed by certain equipment and processes. Among them, the etching process is an important process in semiconductor manufacturing, such as a plasma etching process. The plasma etching process uses the reactive gas to generate plasma after obtaining energy, which contains charged particles such as ions and electrons and highly chemically active neutral atoms, molecules and free radicals, and performs physical and chemical reactions on the etching object. etch. [0003] However, during the plasma etching process, the etching conditions at the edge of the wafer are quite different from those at the center of the wafer. The etching conditions include: plasma density distribution, radio fre...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/68H01L21/67
CPCH01L21/67069H01L21/67265H01L21/681
Inventor 邱勇孙晓东
Owner 上海谙邦半导体设备有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products