Switching device, manufacturing method thereof and phase change random access memory

Abstract

The invention discloses a manufacturing method of a switching device. The manufacturing method comprises the following steps: forming an insulating layer on a substrate; forming a patterned gate conductor on the insulating layer; forming the side walls on the surface of the gate conductor and forming a source region and a drain region in the substrate on the two sides of the gate conductor: specifically, forming a first side wall on the surface of the gate conductor, and forming first doped regions in the substrate on the two sides of the first side wall; forming a second side wall on the surface of the first side wall, and forming second doped regions in the first doped regions on two sides of the second side wall; sequentially forming a third side wall and a fourth side wall on the surface of the second side wall; forming third doped regions in the second doped regions on the two sides of the fourth side wall, forming fourth doped regions in the third doped regions, wherein the doping dosages of the first doped regions to the fourth doped regions are sequentially increased. According to the phase change random access memory provided by the invention, more slowly changing PN junctions can be obtained by carrying out ion implantation for multiple times in the side wall forming process, so that the collision ionization rate is reduced, and the HCI effect is improved.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a switch device and a manufacturing method thereof, and a phase-change random access memory. Background technique [0002] Phase Change RAM (PCPAM) changes the phase change layer inserted between the top electrode and the bottom electrode to a crystalline or amorphous state through a current flowing between the top electrode and the bottom electrode. The information stored in the cell is read using the difference between the resistance of the phase change layer in the crystalline state and the resistance of the phase change layer in the amorphous state. [0003] In PCRAM devices, the high-voltage devices (5.0V) in the peripheral circuit have high requirements for Hot Carrier Injection (HCI), so thicker side walls and gate thickness are required; but at the same time, in order to improve the I / The transmission speed of the O interface requires faster low-voltage devices (1.2V) in...

AI Technical Summary

Problems solved by technology

In the existing technology, in order to meet the requirements of high-voltage and low-voltage devices at the same time, the thickness of the sidewall is 80nm, and the thickness of the gate is 130nm, which has reached the limit, but there is still HCI effect, which leads to the degradation of the electrical performance of the device, and the device cannot work normally. work, affecting device yield and reliability

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