Polycrystalline silicon manufacturing apparatus

Abstract

A polycrystalline silicon manufacturing apparatus according to the present invention may comprise an electrode adapter that electrically connects a core wire holder and a metal electrode, wherein theelectrode adapter may be non-conductive with respect to a screwing part formed in a metal electrode. The polycrystalline silicon manufacturing apparatus according to the present invention may comprisethe electrode adapter that electrically connects the core wire holder and the metal electrode, the electrode adapter may be fixed to the metal electrode by a fixing mechanism part, and the electrodeadapter may be non-conductive with respect to the fixing mechanism part.

Description

technical field [0001] The present invention relates to a device for manufacturing polysilicon by the Siemens method, and in detail, relates to a structure of an electrode adapter for electrically connecting a core wire holder (Holder) with a metal electrode. Background technique [0002] Polysilicon is a single crystal of silicon used to make semiconductors and the silicon raw material used to make solar cells. As a method for producing polysilicon, the Siemens method is a known technique. The Siemens method generally deposits polysilicon on the surface of the silicon core wire by CVD (Chemical Vapor Deposition) by bringing a silane-based raw material gas into contact with the heated silicon core wire. [0003] The Siemens method is to assemble two torii-shaped (inverted U-shaped) silicon core wires in the vertical direction and one torii-shaped (inverted U-shaped) silicon core wire in the horizontal direction, connect the two ends of the core wire clips respectively, and ...

AI Technical Summary

Problems solved by technology

[0014] In addition, JP-A-2010-235438 discloses a form in which a mandrel holding portion is supported on a bottom plate portion by using a nut member screwed to the main body of the clip, in which a core is inserted into a holding hole of the main body of the clip. The lower part of the rod holding part, and the external thread is formed on the outer peripheral surface of the main body of the clip part, but since it also makes these parts conductive as in the above-mentioned form, therefore, in this form, the above-mentioned if If a large current flows through the screw joint, the problem of discharge will easily occur

[0015] In addition, although it is disclosed in Japanese Patent Laid-Open No. 2002-338226 that a support for supporting the lower end of the seed (SEED) is supported by a first support platform composed of an external thread member, and the first support platform is supported by an internal The form of the fixed second supporting platform composed of screw members can be lifted and lowered. However, since the first and second supporting platforms are used as current-conducting paths, it will be the same as the disclosed form of Japanese Patent Application Laid-Open No. 2010-235438. Discharge caused by a large current flowing through the screw joint

[0016] As mentioned above, the connection structure between the electrode adapter and the metal electrode in the prior art is not sufficient for countermeasures against discharge.

Therefore, once the components in the furnace are damaged due to discharge, it will be extremely troublesome to deal with afterwards.

Specifically, in addition to having to replace the electrodes with new ones, the polysilicon rods will also be contaminated

In addition, as a result of the contamination of the bell jar and the substrate, the reaction waste gas in the recovery cycle will contain hydrocarbons as dopants, which will also have an adverse effect on subsequent batches of polysilicon manufacturing.

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