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Semiconductor device

A semiconductor and conductivity technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve the problem of increasing chip size, increasing the package size of semiconductor devices, and not being able to carry high-frequency circuits with high heat dissipation and other issues, to achieve the effect of high heat dissipation

Pending Publication Date: 2021-02-05
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The package structure of the semiconductor device disclosed in Patent Document 1 can mount complex high-frequency circuits, but due to the insufficient heat dissipation of the printed circuit board, the chip size of the semiconductor element is increased, and the package size of the semiconductor device is limited. growing problem
Therefore, the package structure of the semiconductor device disclosed in Patent Document 1 cannot mount a complex high-frequency circuit while having high heat dissipation without increasing the package size.

Method used

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  • Semiconductor device
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Examples

Experimental program
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Effect test

Embodiment approach 1

[0028] figure 1 It is a schematic diagram of the cross section of the semiconductor device according to the first embodiment. figure 2 yes means figure 1 A diagram of the component configuration on the surface side of the semiconductor device, image 3 yes means figure 1 A diagram of the backside of a semiconductor device. figure 1 The schematic diagram of the cross-section is figure 2 Schematic illustration of the cross-section in A-A. The semiconductor device 50 of Embodiment 1 includes a printed circuit board 3, semiconductor chips 1, 2, electronic components 4, thick copper components 14 formed on the back surface of the printed circuit board 3, and semiconductor chips 1, 2, electronic components 4, and printed circuit boards. The cover 10 seals the surface (the surface opposite to the back surface) of the circuit board 3 . The printed circuit board 3 is a general-purpose printed circuit board generally used. The printed circuit board 3 is provided with a resin su...

Embodiment approach 2

[0043] Figure 5 It is a schematic diagram of a cross section of a semiconductor device according to Embodiment 2. FIG. Components that are the same as those of the semiconductor device 50 of Embodiment 1 are denoted by the same reference numerals and redundant descriptions are omitted. In addition, in other embodiments, the same components as those of the semiconductor device 50 in the first embodiment are denoted by the same reference numerals, and overlapping descriptions are omitted. The semiconductor device 50 according to the second embodiment differs from the semiconductor device 50 according to the first embodiment in that the recess 11 is formed on the side of the opening 29 of the printed circuit board 3 , that is, the recess 11 is provided on the side of the opening 29 . Wherein, the recess 11 may be located at any position on the side of the opening 29 .

[0044]The cavity 9 formed in the printed circuit board 3 described in Embodiment 1 is desirably as small as ...

Embodiment approach 3

[0047] Image 6 It is a schematic diagram of a cross section of a semiconductor device according to Embodiment 3. FIG. The difference between the semiconductor device 50 of the third embodiment and the semiconductor device 50 of the first embodiment is that the height of the first wiring pattern 22 a formed on the surface of the printed circuit board 3 with respect to the thick copper member 14 is equal to that of the semiconductor chips 1 and 2 . -10%~+10% of the height based on the thick copper component 14. exist Image 6 In the figure, an example in which the height of the first wiring pattern 22a formed on the surface of the printed circuit board 3 with respect to the thick copper member 14 is equal to the height of the semiconductor chips 1 and 2 with respect to the thick copper member 14 is shown, that is, An example in which the surface position of the first wiring pattern 22 a formed on the surface of the printed circuit board 3 is equal to the surface position of t...

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PUM

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Abstract

A semiconductor device (50) includes: a printed wiring board (3) that has a thick copper member (14) which forms a plurality of external electrode terminals (5, 6) and has a semiconductor chip (1) mounted on one of the terminals, an opening (29) which is arranged on a surface of the thick copper member (14) and exposes a portion of the thick copper member (14), a wiring pattern (21), and a conductive via (7) that connects the pattern (21) to the thick copper member (14); the chip (1) which is mounted on the surface of the thick copper member (14) exposed by the opening (29) and is connected tothe pattern (21) by a metal wire (12); an electronic component (4) which is mounted on a surface of the printed wiring board (3) opposite the thick copper member (14) and is connected to the pattern(21); and a cap (10) or an epoxy resin (28) that seals the surface of the printed wiring board (3) opposite the thick copper member (14), the chip (1), the electronic component (4), and the metal wire(12).

Description

technical field [0001] This application relates to semiconductor devices. Background technique [0002] For wireless communication systems represented by mobile phone base stations, the 5th generation mobile communication system (5G) is expected to be implemented as a next-generation communication method in the future. This communication system is a communication system capable of a large number of simultaneous and large-capacity connections compared to conventional systems, and it is considered that antennas are installed in many areas centering on high-density areas. In order to realize these requirements, a small, low power consumption, and low-cost semiconductor device without extreme cost increase relative to semiconductor devices used in 4th generation mobile communication systems is required. [0003] Currently, semiconductor devices for wireless communication such as mobile communication systems adopt a module configuration in which a high-frequency circuit is forme...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/12H05K1/02
CPCH05K1/0243H05K2201/10166H05K2201/10636H05K3/284H05K1/021H05K2201/10924H05K3/4608Y02P70/50H01L25/16H01L24/42H01L23/66H01L2223/6644H01L2223/6611H01L2223/6683H01L23/3677H01L23/142H01L23/49838H01L2224/48139H01L2224/73265H01L2223/6616H01L2924/19105H01L2224/48091H01L2224/45144H01L24/45H01L2224/48227H01L2924/181H01L2224/49111H01L2224/29339H01L2224/8384H01L2224/32225H01L24/32H01L2224/48137H01L24/29H01L24/73H01L24/83H01L24/49H01L2924/15747H01L2224/83447H01L2924/00014H01L2924/00012H01L2924/00H01L23/12H01L23/3121H01L23/53228H05K1/056H05K3/46
Inventor 森胁孝雄宫胁胜巳
Owner MITSUBISHI ELECTRIC CORP
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